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市场调查报告书
商品编码
1698417

下一代电晶体市场：2025-2030 年预测

Next Generation Transistors Market - Forecasts from 2025 to 2030
出版日期: | 出版商: Knowledge Sourcing Intelligence | 英文 135 Pages | 商品交期: 最快1-2个工作天内

价格
简介目录

下一代电晶体市场预计将以 6.37% 的复合年增长率成长，从 2025 年的 25,879,234,000 美元成长到 2030 年的 35,234,643,000 美元。

在开发高功率、高效率电晶体方面的投资大幅增加。晶体管用于各种设备，包括智慧型手机、平板电脑和笔记型电脑。儘管与摩尔定律相比，缩小技术取得了进展，但晶片製造商仍在增加研发投入，以製造具有更窄鳍片宽度的电晶体。

市场趋势：

  • 扩大家电领域

全球消费性电子产品需求的成长是下一代电晶体市场的主要驱动力。这些电晶体在增强设备性能和提高电池效率方面发挥关键作用。近年来，受电子技术进步和全球可支配收入增加的推动，家用电子电器市场经历了显着增长。

  • 塑造下一代电晶体的竞争策略

下一代电晶体的演变受到竞争策略的推动，例如活性化研发活动和稳步引入创新和先进的电晶体技术。

  • 努力克服当前的限制

半导体行业的领导者正在积极努力克服当前一代晶体管的局限性。此项努力旨在解决现代计算中日益严重的能源浪费问题，同时提高处理能力并扩大积体电路（IC）的用途。例如，与硅基元件相比，氮化镓 (GaN) 电晶体具有更快、更有效率的性能。它还可以设计出外形规格更紧凑的设备，并且在更高功率水平下更节能，从而显着降低功率损耗。

本报告介绍的主要企业包括英特尔公司、高通技术公司、恩智浦半导体公司、SK海力士公司、德州仪器、东芝公司、联发科公司、富士通和Wolfspeed公司。

本报告的主要优点

  • 深刻分析：获得涵盖主要和新兴地区的深入市场洞察，重点关注客户群、政府政策和社会经济因素、消费者偏好、垂直行业和其他子区隔。
  • 竞争格局：了解全球主要企业所采用的策略策略，并了解正确策略带来的潜在市场渗透。
  • 市场趋势和驱动因素：探索动态因素和关键市场趋势以及它们将如何影响市场的未来发展。
  • 可行的建议：利用洞察力进行策略决策，在动态环境中开闢新的业务流和收益。
  • 受众广泛：对于新兴企业、研究机构、顾问公司、中小企业和大型企业都有益且具有成本效益。

它有什么用途？

产业和市场考量、商业机会评估、产品需求预测、打入市场策略、地理扩张、资本支出决策、法律规范与影响、新产品开发、竞争影响

研究范围

  • 2022 年至 2024 年的历史资料和 2025 年至 2030 年的预测资料
  • 成长机会、挑战、供应链前景、法律规范与趋势分析
  • 竞争定位、策略和市场占有率分析
  • 各细分市场和地区（包括国家）的收益成长和预测分析
  • 公司概况（策略、产品、财务资讯、主要趋势等）

目录

第一章执行摘要

第二章市场概述

  • 市场概览
  • 市场定义
  • 研究范围
  • 市场区隔

第三章 商业景气

  • 市场驱动因素
  • 市场限制
  • 市场机会
  • 波特五力分析
  • 产业价值链分析
  • 政策法规
  • 策略建议

第四章 技术展望

第五章下一代晶体管市场（按类型）

  • 介绍
  • 双极电晶体（BJT）
  • 金属氧化物半导体场效电晶体（MOSFET）
  • 高电子移动性电晶体（HEMT）
  • 其他的

第六章 下一代电晶体市场（依材料类型）

  • 介绍
  • 砷化铟（InAs）
  • 砷化镓（GaAs）
  • 磷化铟（InP）
  • 氮化镓（GaN）

第七章 下一代电晶体市场（按最终用户产业）

  • 介绍
  • 航太和国防
  • 消费性电子产品
  • 通讯和技术
  • 产业

第八章下一代晶体管市场（按地区）

  • 介绍
  • 北美洲
    • 按类型
    • 依材料类型
    • 按最终用户产业
    • 按国家
  • 南美洲
    • 按类型
    • 依材料类型
    • 按最终用户产业
    • 按国家
  • 欧洲
    • 按类型
    • 依材料类型
    • 按最终用户产业
    • 按国家
  • 中东和非洲
    • 按类型
    • 依材料类型
    • 按最终用户产业
    • 按国家
  • 亚太地区
    • 按类型
    • 依材料类型
    • 按最终用户产业
    • 按国家

第九章竞争格局及分析

  • 主要企业和策略分析
  • 市场占有率分析
  • 合併、收购、协议和合作
  • 竞争仪錶板

第十章 公司简介

  • Intel Corporation
  • Qualcomm Technologies, Inc.
  • NXP Semiconductors NV
  • SK Hynix Inc.
  • Texas Instruments
  • Toshiba Corporation
  • MediaTek, Inc.
  • Fujitsu
  • Wolfspeed, Inc.
  • Renesas Electronics Corporation
  • Infineon Technologies AG
  • ON Semiconductor Corp.
  • STMicroelectronics NV

第十一章 附录

  • 货币
  • 先决条件
  • 基准年和预测年时间表
  • 相关人员的主要利益
  • 调查方法
  • 简称
简介目录
Product Code: KSI061610543

The next-generation transistor market is projected to grow at a CAGR of 6.37% to reach a market size of US$35,234.643 million in 2030 from US$25,879.234 million in 2025.

There has been a substantial increase in investment in developing high-powered and more efficient transistors. They find their applications across multiple devices, including but not limited to smartphones, tablets, and notebooks. However, despite the reportedly shrinking scale compared to Moore's Law, chip manufacturers have increased their investments in research and development to create transistors with narrower fin widths.

Market Trends:

  • Expansion of the consumer electronics sector

The rising global demand for consumer electronics is a key driver of the next-generation transistor market. These transistors play a critical role in enhancing device performance and improving battery efficiency. Over recent years, the consumer electronics market has experienced significant growth, fueled by advancements in electronics technology and increasing disposable incomes worldwide.

  • Competitive strategies shaping next-generation transistors

The evolution of next-generation transistors is being driven by competitive strategies, including heightened research and development activities and the steady introduction of innovative and advanced transistor technologies.

  • Efforts to overcome current limitations

Leading players in the semiconductor industry are actively working to address the limitations of current-generation transistors. This initiative aims to tackle the growing issue of energy waste in modern computing while simultaneously boosting processing capabilities and broadening the applications of integrated circuits (ICs). Gallium nitride (GaN) transistors, for instance, offer faster and more efficient performance compared to silicon-based devices. They also enable the design of more compact devices with improved form factors and greater energy efficiency at higher power levels, significantly reducing power losses.

Some of the major players covered in this report include Intel Corporation, Qualcomm Technologies, Inc., NXP Semiconductors N.V., SK Hynix Inc., Texas Instruments, Toshiba Corporation, MediaTek, Inc., Fujitsu, Wolfspeed, Inc., among others.

Key Benefits of this Report:

  • Insightful Analysis: Gain detailed market insights covering major as well as emerging geographical regions, focusing on customer segments, government policies and socio-economic factors, consumer preferences, industry verticals, and other sub-segments.
  • Competitive Landscape: Understand the strategic maneuvers employed by key players globally to understand possible market penetration with the correct strategy.
  • Market Drivers & Future Trends: Explore the dynamic factors and pivotal market trends and how they will shape future market developments.
  • Actionable Recommendations: Utilize the insights to exercise strategic decisions to uncover new business streams and revenues in a dynamic environment.
  • Caters to a Wide Audience: Beneficial and cost-effective for startups, research institutions, consultants, SMEs, and large enterprises.

What do businesses use our reports for?

Industry and Market Insights, Opportunity Assessment, Product Demand Forecasting, Market Entry Strategy, Geographical Expansion, Capital Investment Decisions, Regulatory Framework & Implications, New Product Development, Competitive Intelligence

Report Coverage:

  • Historical data from 2022 to 2024 & forecast data from 2025 to 2030
  • Growth Opportunities, Challenges, Supply Chain Outlook, Regulatory Framework, and Trend Analysis
  • Competitive Positioning, Strategies, and Market Share Analysis
  • Revenue Growth and Forecast Assessment of segments and regions including countries
  • Company Profiling (Strategies, Products, Financial Information, and Key Developments among others)

The Next Generation Transistors Market is analyzed into the following segments:

By Type

  • Bipolar Junction Transistor (BJT)
  • Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET)
  • High Electron Mobility Transistor (HEMT)
  • Others

By Type of Material

  • Indium Arsenide (InAs)
  • Gallium Arsenide (GaAs)
  • Indium Phosphide (InP)
  • Gallium Nitride (GaN)

By End-user Industry

  • Aerospace and Defense
  • Consumer Electronics
  • Communication and Technology
  • Industrial

By Geography

  • North America
  • USA
  • Canada
  • Mexico
  • Others
  • South America
  • Brazil
  • Argentina
  • Others
  • Europe
  • Germany
  • France
  • United Kingdom
  • Spain
  • Others
  • Middle East and Africa
  • Saudi Arabia
  • UAE
  • South Africa
  • Israel
  • Others
  • Asia Pacific
  • China
  • Japan
  • South Korea
  • India
  • Thailand
  • Indonesia
  • Taiwan
  • Others

TABLE OF CONTENTS

1. EXECUTIVE SUMMARY

2. MARKET SNAPSHOT

  • 2.1. Market Overview
  • 2.2. Market Definition
  • 2.3. Scope of the Study
  • 2.4. Market Segmentation

3. BUSINESS LANDSCAPE

  • 3.1. Market Drivers
  • 3.2. Market Restraints
  • 3.3. Market Opportunities
  • 3.4. Porter's Five Forces Analysis
  • 3.5. Industry Value Chain Analysis
  • 3.6. Policies and Regulations
  • 3.7. Strategic Recommendations

4. TECHNOLOGICAL OUTLOOK

5. NEXT GENERATION TRANSISTORS MARKET BY TYPE

  • 5.1. Introduction
  • 5.2. Bipolar Junction Transistor (BJT)
  • 5.3. Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET)
  • 5.4. High Electron Mobility Transistor (HEMT)
  • 5.5. Others

6. NEXT GENERATION TRANSISTORS MARKET BY TYPE OF MATERIAL

  • 6.1. Introduction
  • 6.2. Indium Arsenide (InAs)
  • 6.3. Gallium Arsenide (GaAs)
  • 6.4. Indium Phosphide (InP)
  • 6.5. Gallium Nitride (GaN)

7. NEXT GENERATION TRANSISTORS MARKET BY END-USER INDUSTRY

  • 7.1. Introduction
  • 7.2. Aerospace and Defense
  • 7.3. Consumer Electronics
  • 7.4. Communication and Technology
  • 7.5. Industrial

8. NEXT GENERATION TRANSISTORS MARKET BY GEOGRAPHY

  • 8.1. Introduction
  • 8.2. North America
    • 8.2.1. By Type
    • 8.2.2. By Type of Material
    • 8.2.3. By End-user industry
    • 8.2.4. By Country
      • 8.2.4.1. USA
      • 8.2.4.2. Canada
      • 8.2.4.3. Mexico
      • 8.2.4.4. Others
  • 8.3. South America
    • 8.3.1. By Type
    • 8.3.2. By Type of Material
    • 8.3.3. By End-user industry
    • 8.3.4. By Country
      • 8.3.4.1. Brazil
      • 8.3.4.2. Argentina
      • 8.3.4.3. Others
  • 8.4. Europe
    • 8.4.1. By Type
    • 8.4.2. By Type of Material
    • 8.4.3. By End-user industry
    • 8.4.4. By Country
      • 8.4.4.1. Germany
      • 8.4.4.2. France
      • 8.4.4.3. United Kingdom
      • 8.4.4.4. Spain
      • 8.4.4.5. Others
  • 8.5. Middle East and Africa
    • 8.5.1. By Type
    • 8.5.2. By Type of Material
    • 8.5.3. By End-user industry
    • 8.5.4. By Country
      • 8.5.4.1. Saudi Arabia
      • 8.5.4.2. UAE
      • 8.5.4.3. South Africa
      • 8.5.4.4. Israel
      • 8.5.4.5. Others
  • 8.6. Asia Pacific
    • 8.6.1. By Type
    • 8.6.2. By Type of Material
    • 8.6.3. By End-user industry
    • 8.6.4. By Country
      • 8.6.4.1. China
      • 8.6.4.2. Japan
      • 8.6.4.3. South Korea
      • 8.6.4.4. India
      • 8.6.4.5. Thailand
      • 8.6.4.6. Indonesia
      • 8.6.4.7. Taiwan
      • 8.6.4.8. Others

9. COMPETITIVE ENVIRONMENT AND ANALYSIS

  • 9.1. Major Players and Strategy Analysis
  • 9.2. Market Share Analysis
  • 9.3. Mergers, Acquisitions, Agreements, and Collaborations
  • 9.4. Competitive Dashboard

10. COMPANY PROFILES

  • 10.1. Intel Corporation
  • 10.2. Qualcomm Technologies, Inc.
  • 10.3. NXP Semiconductors N.V.
  • 10.4. SK Hynix Inc.
  • 10.5. Texas Instruments
  • 10.6. Toshiba Corporation
  • 10.7. MediaTek, Inc.
  • 10.8. Fujitsu
  • 10.9. Wolfspeed, Inc.
  • 10.10. Renesas Electronics Corporation
  • 10.11. Infineon Technologies AG
  • 10.12. ON Semiconductor Corp.
  • 10.13. STMicroelectronics N.V.

11. APPENDIX

  • 11.1. Currency
  • 11.2. Assumptions
  • 11.3. Base and Forecast Years Timeline
  • 11.4. Key Benefits for the Stakeholders
  • 11.5. Research Methodology
  • 11.6. Abbreviations