全球新兴非易失性存储器市场 - 增长、趋势、COVID-19 的影响和预测 (2023-2028)

新兴的非易失性存储器市场预计在预测期内 (2023-2028) 将以约 22.8% 的复合年增长率增长。

由于消费电子、企业和工业等广泛的最终用户行业对存储设备的接受，非易失性存储器的新兴市场预计将显着增长。

主要亮点

• 对高速访问和低功耗的存储设备的需求不断增长，以及连接和可穿戴设备对非易失性存储器的需求不断增长，这些都是推动市场增长的主要因素。 然而，设计和製造非易失性存储设备的高度复杂性预计将阻碍预测期内的市场增长。
• 经过几年的发展，嵌入式非易失性存储器技术已经相当成熟。 几款基于 MRAM 的嵌入式设备将在 2021 年进入量产，包括 GreenWave 的 AI 处理器，采用来自 GlobalFoundries 的 eMRAM（22nm FDSOI），由 Numen 和 Gyrfalcon（TSMC 的 22nm ULL）设计和开发。包括 Edge AI Accelerator。
• 该领域研究活动的增加正在推动市场的增长。 例如，三星将在 2021 年推进其 14 纳米工艺以支持专为提高写入速度和密度而设计的闪存嵌入式 MRAM，并宣布改进其 MRAM 的 MTJ 功能。 此外，我们的目标是新的非易失性存储器应用，例如可穿戴设备、微控制器和物联网设备。
• COVID-19 大流行及其全球封锁对内存市场产生了影响。 对笔记本电脑和数据中心的需求增长，但智能手机和汽车面临放缓。 因此，内存需求相对平衡。 新兴的非易失性存储器市场正在数据中心市场中扩展，重点是利用 3D XPoint 的存储类存储器 (SCM) 应用，这不会对整个新兴非易失性存储器市场的发展产生负面影响。 2020年上半年因疫情造成的供应链中断，到2020年下半年伊始基本得到解决。

新兴非易失性存储器市场趋势

对数据中心的需求不断扩大

• 在数据中心内存需求大背景下，对内存设备的需求增加预计将推动对新兴非易失性内存的需求。
• 对数据中心的这种需求是由对高性能计算、边缘计算、大数据和云应用程序的需求增加推动的。 随着机器学习和人工智能的日益普及，供应商正在选择更快的速度和更大的数据量。 在大流行期间，远程工作、在线教育课程和在线医疗援助的迅速采用进一步补充了增长。
• 此外，为了响应 Google、Amazon Web Services、Facebook 和 Microsoft Azure 的新数据中心建设项目，Intel 和 AMD 在过去几年推出了新的服务器处理器。 预计类似的趋势将推动市场。
• 亚太地区的数据中心市场得到中国和印度等新兴经济体的支持。 预计中国数据中心市场的增长将受到政府支持措施和国际投资的推动。 政府推动人工智能用于安全和情报应用进一步推动了对新兴非易失性存储器的需求。
• 据 NASSCOM 称，印度目前支持 80 个第三方数据中心。 到 2025 年，我们正在见证来自国内外参与者的投资预计将达到每年 46 亿美元。

亚太地区在预测期内获得显着的市场份额

• 亚太地区是全球最大的非易失性存储器新兴市场之一。 该地区几乎所有终端用户应用程序都有很高的需求，主要受中国、印度和印度尼西亚等多个新兴国家对智能手机的需求推动。
• 由于印度拥有庞大的手机消费群，预计手机产值将从2009财年的3000万美元进一步增加到2014财年的1.26亿美元。印度政府正在推动国家投资。□投资印度，促进机构，已经宣布。
• 此外，在中国，随着在线娱乐、远程办公以及视频和语音通话服务需求的增加，包括数据中心在内的新型基础设施建设正在取得进展。 随着数字经济的快速发展，大规模大数据中心的建设在国内日益引人注目。 在此类数据中心中，非易失性存储器正在兴起，它可以减少电源故障或系统崩溃时的停机时间，并提供巨大的经济价值。
• 中国、韩国和新加坡等国家/地区的半导体製造设施非常活跃。 多家跨国内存製造商正在向中国市场投入巨资，尤其是受到中国政府“中国製造 2025”等举措的推动。 中国政府制定了一个雄心勃勃的目标，即到 2030 年将半导体产值增加到 3050 亿美元，满足国内约 80% 的半导体需求。 预计这一因素将在预测期内进一步增加对该国的投资。
• 此外，该地区领先的研究机构和大学正在开发与新兴非易失性存储器相关的各种技术。 例如，2022 年 1 月，由东京工业大学电气与电子工程系 Pham Nam Hai 副教授领导的国际研究团队与加州大学的其他研究人员一起宣布了自旋轨道集成磁隧道结 (MTJ) 和拓扑绝缘体。我创建了一个扭矩磁阻 RAM (SOT-MRAM) 设备。 我们已经在拓扑绝缘体中展示了具有相对高隧道磁阻效应的读出和低电流密度的写入。
• 因此，预计亚太地区的收入份额将比其他地区实现更高的增长。

新兴非易失性存储器市场竞争者分析

新兴的非易失性存储器市场受到台积电、德州仪器公司、英特尔公司、Microchip Technology Inc.、Infineon Technologies AG、Fujitsu Limited、GlobalFoundries Inc、CrossBar Inc. 等几家主要参与者的适度竞争。我是这里。 从市场份额的角度来看，一些主要参与者目前主导着市场。 然而，由于创新和技术进步，许多公司正在通过有机和无机增长战略以及新市场的开发来增加他们在市场上的存在。 以下是最近的一些市场动态。

其他福利。

• Excel 格式的市场预测 (ME) 表
• 三个月的分析师支持

内容

第一章介绍

• 研究假设和市场定义
• 调查范围

第二章研究方法论

第 3 章执行摘要

第 4 章市场洞察

• 市场概览
• 产业吸引力 - 波特五力分析
  • 供应商的议价能力
  • 买家的议价能力
  • 新进入者的威胁
  • 替代品的威胁
  • 竞争强度 竞争对手公司
• 工业价值链分析
• 评估 COVID-19 对市场的影响

第 5 章市场动态

• 动力
  • 对高速访问、低功耗存储设备的需求不断增加
  • 互联设备和可穿戴设备对非易失性存储器的需求不断增长
• 约束因素
  • 非易失性存储设备设计和製造的复杂性

第 6 章市场细分

• 类型
  • 独立型
  • 嵌入式
• 最终用户行业
  • 工业设备
  • 消费类电子产品
  • 公司
  • 其他
• 按地区
  • 北美
  • 欧洲
  • 亚太地区
  • 世界其他地区

第七章竞争格局

• 公司简介
  • TSMC
  • Samsung Electronics Co. Ltd.
  • GlobalFoundries Inc.
  • Texas Instruments Inc.
  • Fujitsu Ltd.
  • SK Hynix Inc.
  • Western Digital Corp.
  • CrossBar Inc.
  • Microchip Technology Inc.
  • Intel Corporation
  • Infineon Technologies AG
  • United Microelectronics Corporation（UMC）
  • Toshiba Corp.
  • Nantero Inc.

第八章投资分析

第九章市场机会与未来趋势

第十章关于美国

The emerging non-volatile memory market is expected to register a CAGR of approximately 22.8% during the forecast period (2023 - 2028). The emerging non-volatile memory market is anticipated to witness significant growth owing to the acceptance of memory devices across a wide range of end-user industries, including consumer electronics, enterprise, industrial, and others.

Key Highlights

• The rising demand for fast access and low power consuming memory devices, as well as increasing demand for non-volatile memory in connected and wearable devices, are some of the major factors propelling the market growth. However, high complexity in designing and manufacturing emerging non-volatile memory devices is anticipated to hamper the market growth during the forecast period.
• After several years of development, embedded emerging non-volatile memory technologies have gained substantial maturity. Several embedded MRAM-based devices entered volume production in 2021, among which are GreenWave's AI processors with GlobalFoundries' eMRAM (22nm FDSOI) and edge-AI accelerators designed and developed by Numen and Gyrfalcon (22nm ULL at TSMC).
• The increasing research activities in this space are driving the market's growth. For instance, in 2021, Samsung announced the improvement of the MTJ function of its MRAM along with advancing its 14 nm process to support its flash-type embedded MRAM designed to increase the write speed and density. In addition, the company targets the IC's emerging non-volatile memory application in wearables, microcontrollers, and IoT devices.
• COVID-19 pandemic and its global lockdowns combined impacted the memory market. Laptops and Datacentres demand grew, whereas smartphones and automotive faced a slowdown. The net result has been a comparatively balanced memory demand. As the emerging non-volatile memory business is expanding mostly on the datacentre market with storage class memory (SCM) applications facilitated by 3D XPoint, there has not been a negative impact on the overall emerging non-volatile memory market evolution. Though the pandemic created supply-chain disruptions in the first half of 2020, these were mostly cleared by the beginning of the second half of 2020.

Emerging Non-Volatile Memory Market Trends

Growing Demand for Data Centers

• The increasing demand for memory devices, buoyed by the requirement of data centers for memory, is expected to drive the demand for emerging non-volatile memories.
• This demand for data centers is driven by the increasing demand for high-performance computing, edge computing, big data, and cloud applications. The rising adoption of machine learning and artificial intelligence bolsters the vendors to opt for faster and higher data capacities. The rapid adoption of remote work, online educational classes, and online medical assistance during the pandemic further complemented the growth.
• Furthermore, in response to the new data center construction projects by Google, Amazon Web Service, Facebook, and Microsoft Azure, Intel and AMD introduced new server processors in the last few years. Similar trends are expected to drive the market.
• The Asia-Pacific data center market is buoyed by the developing economies of China and India. The growth in the Chinese data center market is expected to be bolstered by supportive government initiatives and international investments. The government push for AI in security and intelligence use further strengthens the demand for emerging non-volatile memories.
• According to NASSCOM, India is currently supporting 80 third-party data centers. It is witnessing investment from local and international players expected to touch USD 4.6 billion per annum by 2025.

Asia-Pacific to Register a Significant Market Share During the Forecast Period

• Asia-Pacific is one of the largest markets for emerging non-volatile memories globally. The region has high demand from almost all end-user applications, primarily led by demand for smartphones in multiple developing countries, such as China, India, Indonesia, etc.
• India has a large consumer base for mobile phones; hence the production of mobile handsets is further slated to increase in value from USD 30 million in FY 21 to USD 126 million in FY 26, as stated by Invest in India, the National Investment Promotion and Facilitation Agency of the Government of India.
• Further, the development of new infrastructure, including data centers, has been growing in China, driven by an increase in demand for online entertainment, telecommuting, and video and voice call services. With the fast development of the digital economy, building large, big data centers in the country is becoming more notable. This has led to the growth of emerging non-volatile memory usage in such data centers, which helps reduce downtime caused by a power failure or system crash event, thereby providing significant financial value.
• The semiconductor fabrication facilities in countries like China, Korea, and Singapore, are highly active. Several multinational memory manufacturers direct an immense amount of capital into the Chinese market, especially boosted by the country's government initiatives, such as Made in China 2025. The country's ambitious goal is to reach a value of USD 305 billion in semiconductor output by the year 2030 and meet about 80% of the domestic demand for semiconductors. This factor is expected to draw more investments into the country over the forecast period.
• Moreover, leading regional research institutes and universities are developing various technologies related to emerging non-volatile memory. For instance, in January 2022, an international research team led by Associate Professor Pham Nam Hai of the Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, along with other researchers from the University of California, created spin-orbit torque magnetoresistive RAM (SOT-MRAM) devices that integrate magnetic tunneling junctions (MTJs) and topological insulators. A readout through a relatively high tunneling magnetoresistance effect and writing utilizing low current density by a topological insulator was demonstrated.
• Thus, owing to the aforementioned factors, the revenue share from Asia-Pacific is anticipated to grow faster than the other geographical regions during the forecast period.

Emerging Non-Volatile Memory Market Competitor Analysis

The Global Emerging Non-Volatile Memory Market is moderately competitive and consists of several major players such as TSMC, Texas Instruments Inc., Intel Corporation, Microchip Technology Inc., Infineon Technologies AG, Fujitsu Ltd., GlobalFoundries Inc., CrossBar Inc., etc. In terms of market share, few major players currently dominate the market. However, with innovations and technological advancements, many companies are increasing their market presence through organic and inorganic growth strategies and tapping new markets. Some of the recent developments in the market are:

• March 2022 - Fujitsu Ltd. launched a 12Mbit ReRAM (Resistive Random Access Memory), MB85AS12MT, which is the largest density in Fujitsu's ReRAM product family. This novel product is a non-volatile memory having a large memory density of 12Mbit in a very tiny package size of around 2mm x 3mm. Additionally, it is suitable for wearable devices such as smartwatches and hearing aids.
• October 2021 - CrossBar Inc. announced new applications of its Resistive RAM (ReRAM) technology for usage in one-time-programmable (OTP) and few-time programmable (FTP) non-volatile memory (NVM) applications.

Additional Benefits:

• The market estimate (ME) sheet in Excel format
• 3 months of analyst support

TABLE OF CONTENTS

1 INTRODUCTION

• 1.1 Study Assumption and Market Definition
• 1.2 Scope Of The Study

2 RESEARCH METHODOLOGY

3 EXECUTIVE SUMMARY

4 MARKET INSIGHTS

• 4.1 Market Overview
• 4.2 Industry Attractiveness - Porter's Five Forces Analysis
  • 4.2.1 Bargaining Power Of Suppliers
  • 4.2.2 Bargaining Power Of Buyers
  • 4.2.3 Threat Of New Entrants
  • 4.2.4 Threat Of Substitute
  • 4.2.5 Intensity Of Competition Rivarly
• 4.3 Industry Value Chain Analysis
• 4.4 Assessment of Impact of COVID-19 on the Market

5 MARKET DYNAMICS

• 5.1 Drivers
  • 5.1.1 Rising demand for fast access and low power consuming memory devices
  • 5.1.2 Increasing demand for non-volatile memory in connected and wearable devices
• 5.2 Restraints
  • 5.2.1 High complexity in designing and manufacturing emerging non-volatile memory devices

6 MARKET SEGMENTATION

• 6.1 Type
  • 6.1.1 Stand-alone
  • 6.1.2 Embedded
• 6.2 End-user Industry
  • 6.2.1 Industrial
  • 6.2.2 Consumer Electronics
  • 6.2.3 Enterprise
  • 6.2.4 Others
• 6.3 Geography
  • 6.3.1 North America
  • 6.3.2 Europe
  • 6.3.3 Asia-Pacific
  • 6.3.4 Rest of the World

7 COMPETITIVE LANDSCAPE

• 7.1 Company Profiles
  • 7.1.1 TSMC
  • 7.1.2 Samsung Electronics Co. Ltd.
  • 7.1.3 GlobalFoundries Inc.
  • 7.1.4 Texas Instruments Inc.
  • 7.1.5 Fujitsu Ltd.
  • 7.1.6 SK Hynix Inc.
  • 7.1.7 Western Digital Corp.
  • 7.1.8 CrossBar Inc.
  • 7.1.9 Microchip Technology Inc.
  • 7.1.10 Intel Corporation
  • 7.1.11 Infineon Technologies AG
  • 7.1.12 United Microelectronics Corporation (UMC)
  • 7.1.13 Toshiba Corp.
  • 7.1.14 Nantero Inc.

8 INVESTMENT ANALYSIS

9 MARKET OPPORTUNITES AND FUTURE TRENDS

10 ABOUT US