新兴非挥发性记忆体：全球市场占有率分析、产业趋势与统计、成长预测（2025-2030 年）

预计预测期内全球新兴非挥发性记忆体市场复合年增长率将超过 22.89%。

主要亮点

• 对高速存取和低功耗储存装置的需求不断增长，以及对连网型设备和穿戴式装置中非挥发性记忆体的需求不断增长是推动市场成长的关键因素。然而，新兴非挥发性储存设备的设计和製造非常复杂，预计这会在预测期内阻碍市场成长。
• 经过几年的发展，嵌入式新兴非挥发性记忆体技术已经相当成熟。 2021 年，多种基于嵌入式 MRAM 的设备投入量产，包括采用 GlobalFoundries eMRAM 的 GreenWave 的 AI 处理器（22nm FDSOI），以及由 Numen 和 Gyrfalcon 设计和开发的边缘 AI 加速器（台积电的 22nm ULL）。
• 该领域研究活动的活性化正在推动市场的成长。例如，2021 年，三星宣布改进其 14nm 工艺，以支援旨在提高写入速度和密度的快闪记忆体型嵌入式 MRAM，以及改进 MRAM 的 MTJ 功能。此外，该公司还瞄准穿戴式装置、微控制器和物联网装置中的非挥发性记忆体应用。
• COVID-19 疫情及其全球封锁对记忆体市场产生了影响。对笔记型电脑和资料中心的需求不断增长，但智慧型手机和汽车的需求却放缓。因此，记忆体需求保持相对平衡。新兴非挥发性记忆体业务主要在资料中心市场扩张，受3D XPoint推动的储存层级记忆体（SCM）应用驱动，不会对整体新兴非挥发性记忆体市场的演变产生负面影响。 2020年上半年，疫情导致供应链中断，但到下半年这些问题已基本解决。

新兴非挥发性记忆体市场趋势

资料中心需求不断成长

• 受资料中心记忆体需求的推动，记忆体设备的需求不断增加，预计将推动对新兴非挥发性记忆体的需求。
• 对资料中心的需求是由对高效能运算、边缘运算、巨量资料和云端应用的不断增长的需求所推动的。机器学习和人工智慧的日益普及正在推动供应商选择更快的速度和更大的资料量。疫情期间远距工作、线上教育课程和线上医疗援助的快速采用将进一步促进这一成长。
• 此外，英特尔和AMD近年来也持续推出新的伺服器处理器，以回应Google、亚马逊网路服务、Facebook和微软Azure的新资料中心建置计划。预计类似的趋势也将推动市场发展。
• 亚太资料中心市场受到中国和印度等新兴经济体的推动。预计中国资料中心市场的成长将受到政府支持和国际投资的推动。政府推动人工智慧在安全和智慧应用方面的发展，进一步增强了对新兴非挥发性记忆体的需求。
• 据Nasscom称，印度目前支援80个第三方资料中心。它正吸引国内外参与者的投资，预计到 2025 年每年的投资将达到 46 亿美元。

预测期内亚太地区将占据主要市场占有率

• 亚太地区是全球最大的新兴非挥发性记忆体市场之一。该地区几乎所有终端用户应用程式的需求都很高，主要受中国、印度和印尼等几个新兴国家对智慧型手机的需求所推动。
• 印度政府的国家投资促进和便利机构投资印度表示，凭藉印度庞大的行动电话消费基数，行动电话产值预计将从21财年的3,000万美元进一步增加到26财年的1.26亿美元。
• 此外，受线上娱乐、在家工作以及视讯和语音通话服务需求不断增长的推动，中国正在经历包括资料中心在内的新基础设施建设。随着数位经济的快速发展，大型资料中心建置在国家层级凸显。因此，这些资料中心越来越多地使用非挥发性记忆体，透过减少因断电或系统崩溃造成的停机时间，它提供了巨大的经济价值。
• 中国、韩国和新加坡等国家的半导体製造设施非常活跃。跨国记忆体製造商正大力投资中国市场，尤其是在「中国製造2025」等政府措施的推动下。该国雄心勃勃的目标是到 2030 年实现半导体产值达到 3,050 亿美元，满足该国约 80% 的国内半导体需求。因此，预计预测期内该国的投资将进一步增加。
• 此外，该地区领先的研究机构和大学正在开发一系列与新兴非挥发性记忆体相关的技术。例如，2022年1月，由工业工业大学电气电子工程系副教授范南海领导的国际研究团队与加州大学的其他研究人员一起，创建了磁隧道接点（MTJ）和拓扑绝缘体的自旋轨道扭矩电阻式记忆体（SOT-MRAM）设备。已经证明了使用相对较高的隧道磁阻效应进行读出以及使用拓扑绝缘体中的低电流密度进行写入。
• 因此，由于上述因素，预计预测期内亚太地区的收益占有率将比其他地区增长更快。

新兴非挥发性记忆体产业概况

全球新兴非挥发性记忆体市场竞争适中，主要参与者包括：台积电、德州仪器公司、英特尔公司、微晶片科技公司、英飞凌科技股份公司、富士通有限公司、GlobalFoundries 公司、CrossBar 公司等。 就市场份额而言，目前只有少数几家主要公司占据市场主导地位。

• 2022 年 3 月－富士通有限公司推出了 12Mbit ReRAM（电阻式随机存取记忆体）MB85AS12MT，是富士通 ReRAM 产品系列中密度最高的产品。这款新产品是一种非挥发性记忆体，具有 12 Mbit 的高储存密度，并且封装尺寸超紧凑，约为 2 mm x 3 mm。此外，它还适用于智慧型手錶和助听器等穿戴式装置。
• 2021 年 10 月 - CrossBar Inc. 宣布电阻式记忆体(ReRAM) 技术在一次性可编程 (OTP) 和几次可编程 (FTP) 非挥发性记忆体 (NVM) 应用中的新用途。

其他福利：

• Excel 格式的市场预测 (ME) 表
• 3 个月的分析师支持

目录

第 1 章 简介

• 研究假设和市场定义
• 研究范围

第二章调查方法

第三章执行摘要

第四章 市场洞察

• 市场概况
• 产业吸引力－波特五力分析
  • 供应商的议价能力
  • 买家的议价能力
  • 新进入者的威胁
  • 替代品的威胁
  • 竞争激烈
• 产业价值链分析
• COVID-19 市场影响评估

第五章 市场动态

• 驱动程式
  • 对高速存取和低功耗储存设备的需求不断增加
  • 连网型设备和穿戴式装置对非挥发性记忆体的需求不断增加
• 限制因素
  • 新兴非挥发性记忆体的设计和製造复杂性不断增加

第六章 市场细分

• 按类型
  • 独立
  • 嵌入式
• 按最终用户产业
  • 产业
  • 消费性电子产品
  • 企业
  • 其他的
• 按地区
  • 北美洲
  • 欧洲
  • 亚太地区
  • 世界其他地区

第七章 竞争格局

• 公司简介
  • TSMC
  • Samsung Electronics Co. Ltd.
  • GlobalFoundries Inc.
  • Texas Instruments Inc.
  • Fujitsu Ltd.
  • SK Hynix Inc.
  • Western Digital Corp.
  • CrossBar Inc.
  • Microchip Technology Inc.
  • Intel Corporation
  • Infineon Technologies AG
  • United Microelectronics Corporation（UMC）
  • Toshiba Corp.
  • Nantero Inc.

第八章投资分析

第九章 市场机会与未来趋势

第 10 章：出版商

The Global Emerging Non-Volatile Memory Market is expected to register a CAGR of greater than 22.89% during the forecast period.

Key Highlights

• The rising demand for fast access and low power consuming memory devices, as well as increasing demand for non-volatile memory in connected and wearable devices, are some of the major factors propelling the market growth. However, high complexity in designing and manufacturing emerging non-volatile memory devices is anticipated to hamper the market growth during the forecast period.
• After several years of development, embedded emerging non-volatile memory technologies have gained substantial maturity. Several embedded MRAM-based devices entered volume production in 2021, among which are GreenWave's AI processors with GlobalFoundries' eMRAM (22nm FDSOI) and edge-AI accelerators designed and developed by Numen and Gyrfalcon (22nm ULL at TSMC).
• The increasing research activities in this space are driving the market's growth. For instance, in 2021, Samsung announced the improvement of the MTJ function of its MRAM along with advancing its 14 nm process to support its flash-type embedded MRAM designed to increase the write speed and density. In addition, the company targets the IC's emerging non-volatile memory application in wearables, microcontrollers, and IoT devices.
• COVID-19 pandemic and its global lockdowns combined impacted the memory market. Laptops and Datacentres demand grew, whereas smartphones and automotive faced a slowdown. The net result has been a comparatively balanced memory demand. As the emerging non-volatile memory business is expanding mostly on the datacentre market with storage class memory (SCM) applications facilitated by 3D XPoint, there has not been a negative impact on the overall emerging non-volatile memory market evolution. Though the pandemic created supply-chain disruptions in the first half of 2020, these were mostly cleared by the beginning of the second half of 2020.

Emerging Non-Volatile Memory Market Trends

Growing Demand for Data Centers

• The increasing demand for memory devices, buoyed by the requirement of data centers for memory, is expected to drive the demand for emerging non-volatile memories.
• This demand for data centers is driven by the increasing demand for high-performance computing, edge computing, big data, and cloud applications. The rising adoption of machine learning and artificial intelligence bolsters the vendors to opt for faster and higher data capacities. The rapid adoption of remote work, online educational classes, and online medical assistance during the pandemic further complemented the growth.
• Furthermore, in response to the new data center construction projects by Google, Amazon Web Service, Facebook, and Microsoft Azure, Intel and AMD introduced new server processors in the last few years. Similar trends are expected to drive the market.
• The Asia-Pacific data center market is buoyed by the developing economies of China and India. The growth in the Chinese data center market is expected to be bolstered by supportive government initiatives and international investments. The government push for AI in security and intelligence use further strengthens the demand for emerging non-volatile memories.
• According to NASSCOM, India is currently supporting 80 third-party data centers. It is witnessing investment from local and international players expected to touch USD 4.6 billion per annum by 2025.

Asia-Pacific to Register a Significant Market Share During the Forecast Period

• Asia-Pacific is one of the largest markets for emerging non-volatile memories globally. The region has high demand from almost all end-user applications, primarily led by demand for smartphones in multiple developing countries, such as China, India, Indonesia, etc.
• India has a large consumer base for mobile phones; hence the production of mobile handsets is further slated to increase in value from USD 30 million in FY 21 to USD 126 million in FY 26, as stated by Invest in India, the National Investment Promotion and Facilitation Agency of the Government of India.
• Further, the development of new infrastructure, including data centers, has been growing in China, driven by an increase in demand for online entertainment, telecommuting, and video and voice call services. With the fast development of the digital economy, building large, big data centers in the country is becoming more notable. This has led to the growth of emerging non-volatile memory usage in such data centers, which helps reduce downtime caused by a power failure or system crash event, thereby providing significant financial value.
• The semiconductor fabrication facilities in countries like China, Korea, and Singapore, are highly active. Several multinational memory manufacturers direct an immense amount of capital into the Chinese market, especially boosted by the country's government initiatives, such as Made in China 2025. The country's ambitious goal is to reach a value of USD 305 billion in semiconductor output by the year 2030 and meet about 80% of the domestic demand for semiconductors. This factor is expected to draw more investments into the country over the forecast period.
• Moreover, leading regional research institutes and universities are developing various technologies related to emerging non-volatile memory. For instance, in January 2022, an international research team led by Associate Professor Pham Nam Hai of the Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, along with other researchers from the University of California, created spin-orbit torque magnetoresistive RAM (SOT-MRAM) devices that integrate magnetic tunneling junctions (MTJs) and topological insulators. A readout through a relatively high tunneling magnetoresistance effect and writing utilizing low current density by a topological insulator was demonstrated.
• Thus, owing to the aforementioned factors, the revenue share from Asia-Pacific is anticipated to grow faster than the other geographical regions during the forecast period.

Emerging Non-Volatile Memory Industry Overview

The Global Emerging Non-Volatile Memory Market is moderately competitive and consists of several major players such as TSMC, Texas Instruments Inc., Intel Corporation, Microchip Technology Inc., Infineon Technologies AG, Fujitsu Ltd., GlobalFoundries Inc., CrossBar Inc., etc. In terms of market share, few major players currently dominate the market. However, with innovations and technological advancements, many companies are increasing their market presence through organic and inorganic growth strategies and tapping new markets. Some of the recent developments in the market are:

• March 2022 - Fujitsu Ltd. launched a 12Mbit ReRAM (Resistive Random Access Memory), MB85AS12MT, which is the largest density in Fujitsu's ReRAM product family. This novel product is a non-volatile memory having a large memory density of 12Mbit in a very tiny package size of around 2mm x 3mm. Additionally, it is suitable for wearable devices such as smartwatches and hearing aids.
• October 2021 - CrossBar Inc. announced new applications of its Resistive RAM (ReRAM) technology for usage in one-time-programmable (OTP) and few-time programmable (FTP) non-volatile memory (NVM) applications.

Additional Benefits:

• The market estimate (ME) sheet in Excel format
• 3 months of analyst support

TABLE OF CONTENTS

1 INTRODUCTION

• 1.1 Study Assumption and Market Definition
• 1.2 Scope Of The Study

2 RESEARCH METHODOLOGY

3 EXECUTIVE SUMMARY

4 MARKET INSIGHTS

• 4.1 Market Overview
• 4.2 Industry Attractiveness - Porter's Five Forces Analysis
  • 4.2.1 Bargaining Power Of Suppliers
  • 4.2.2 Bargaining Power Of Buyers
  • 4.2.3 Threat Of New Entrants
  • 4.2.4 Threat Of Substitute
  • 4.2.5 Intensity Of Competition Rivarly
• 4.3 Industry Value Chain Analysis
• 4.4 Assessment of Impact of COVID-19 on the Market

5 MARKET DYNAMICS

• 5.1 Drivers
  • 5.1.1 Rising demand for fast access and low power consuming memory devices
  • 5.1.2 Increasing demand for non-volatile memory in connected and wearable devices
• 5.2 Restraints
  • 5.2.1 High complexity in designing and manufacturing emerging non-volatile memory devices

6 MARKET SEGMENTATION

• 6.1 Type
  • 6.1.1 Stand-alone
  • 6.1.2 Embedded
• 6.2 End-user Industry
  • 6.2.1 Industrial
  • 6.2.2 Consumer Electronics
  • 6.2.3 Enterprise
  • 6.2.4 Others
• 6.3 Geography
  • 6.3.1 North America
  • 6.3.2 Europe
  • 6.3.3 Asia-Pacific
  • 6.3.4 Rest of the World

7 COMPETITIVE LANDSCAPE

• 7.1 Company Profiles
  • 7.1.1 TSMC
  • 7.1.2 Samsung Electronics Co. Ltd.
  • 7.1.3 GlobalFoundries Inc.
  • 7.1.4 Texas Instruments Inc.
  • 7.1.5 Fujitsu Ltd.
  • 7.1.6 SK Hynix Inc.
  • 7.1.7 Western Digital Corp.
  • 7.1.8 CrossBar Inc.
  • 7.1.9 Microchip Technology Inc.
  • 7.1.10 Intel Corporation
  • 7.1.11 Infineon Technologies AG
  • 7.1.12 United Microelectronics Corporation (UMC)
  • 7.1.13 Toshiba Corp.
  • 7.1.14 Nantero Inc.

8 INVESTMENT ANALYSIS

9 MARKET OPPORTUNITES AND FUTURE TRENDS

10 ABOUT US