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市场调查报告书
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1687930

非挥发性记忆体：市场占有率分析、产业趋势与统计、成长预测（2025-2030 年）

Non-Volatile Memory - Market Share Analysis, Industry Trends & Statistics, Growth Forecasts (2025 - 2030)
出版日期: | 出版商: Mordor Intelligence | 英文 180 Pages | 商品交期: 2-3个工作天内

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简介目录

非挥发性记忆体市场规模预计在 2025 年为 1,056.4 亿美元，预计到 2030 年将达到 1,841.8 亿美元，预测期内（2025-2030 年）的复合年增长率为 11.76%。

非挥发性记忆体市场-IMG1

在过去十年中，可携式系统市场的成长推动了半导体产业对用于大容量储存应用的非挥发性记忆体 (NVM) 技术的兴趣。对更高效率、更快记忆体存取和更低功耗的需求正在推动 NVM 市场的成长。

主要亮点

  • 在蓬勃发展的消费性电子产业中，用户期望他们的设备能够不断改进，以闪电般的速度提供新功能，并储存更多的电影、照片和音乐。儘管闪存在过去几十年中实现了重大创新，但由于快闪记忆体遇到了阻碍其进一步扩展的技术障碍，因此需要新一代记忆体。
  • 快闪记忆体的低成本和低功耗使其在消费性电子产品中广泛应用，成为市场成长的关键。 NVM 用于智慧型手机和可穿戴设备，以实现更大的储存空间和更快的记忆体存取。
  • 该领域研究活动的活性化也推动了市场的成长。例如，2021年3月，英飞凌科技有限责任公司宣布推出符合QML-Q和高可靠性工业规范的第二代非挥发性静态RAM，主要支援航太和工业应用等恶劣环境下的非挥发性程式码储存。
  • 同样，三星在 2021 年初宣布改进其 MRAM 的 MTJ 功能，推进其 14nm 製程以支援旨在提高写入速度和密度的快闪记忆体型嵌入式 MRAM。此外，该公司还瞄准穿戴式装置、微控制器和物联网装置中的 IC 新兴 NVM 应用。
  • 然而，目前市面上非挥发性记忆体的问题往往源自于其读写耐久性和资料保存特性。例如，相变记忆体 (PCM) 和快闪记忆体就是耐久性有限的 NVM 的例子。这些 NVM 的耐久性较低，因为经过几个写入週期（对于 PCM 来说为 RESET 週期，对于快闪记忆体来说为程式设计/擦除週期）之后，储存单元就会磨损，无法再可靠地储存资讯。
  • COVID-19 疫情对智慧型手机产业等多个非挥发性记忆体的终端用户产业产生了负面影响。在云端运算、人工智慧和物联网等主要大趋势的推动下，家庭办公室活动对伺服器和 PC 记忆体的需求激增，预计在预测期内支援非挥发性记忆体的成长。

非挥发性记忆体市场趋势

快闪记忆体可望占据较大市场占有率

  • 随着消费性电子产品的需求不断增长和普及，设备快闪记忆体的用途也越来越广泛。这种记忆体类型存在于笔记型电脑、GPS、电子乐器、数位相机、行动电话和许多其他设备中。此外，它也被资料中心解决方案供应商广泛采用。随着云端解决方案的快速采用，对资料中心的需求也在快速成长。
  • 此外，随着人工智慧/机器学习应用和物联网设备的日益增长，低延迟、高吞吐量的云端储存、快闪记忆体和企业资料中心都针对训练深度神经网路进行了最佳化。预计资料中心数量和规模的增加将进一步推动需求。
  • 为了满足日益增长的需求，市场上的供应商正专注于开发具有更好功能的更新的解决方案。例如，2021年2月，铠侠株式会社与西部数据公司宣布开发第六代162层3D快闪记忆体技术。这是该公司密度最高、最先进的3D快闪记忆体技术，采用了多项技术和製造创新。
  • 此外，NOR快闪记忆体因超低功耗的需求也越来越受欢迎。例如，英飞凌科技于 2022 年 1 月宣布增加开发工具以支援其 SEMPER NOR 快闪记忆体装置系列。这使开发人员能够快速设计安全关键且固有安全的汽车、工业和通讯系统。
  • 同样，旺宏国际于2021年11月宣布，它是业界第一家开始量产1.2V设备的串行NOR快闪製造商。根据该公司介绍，超低功耗（ULP）和高速120MHz MX25S串行NOR快闪记忆体将迎来新一代产品，这些产品针对的是物联网（IoT）、无线通讯技术、WiFi、窄频物联网系统、手持设备、蓝牙设备和消费性应用等应用。

亚太地区预计将占据主要市场占有率

  • 线上娱乐、在家工作以及视讯和语音通话服务的需求激增，推动了亚太地区各国包括资料中心在内的新基础设施建设。数位经济的快速发展，使得中国、印度等国家都有建置大型巨量资料中心的需求。
  • 中国积极进军NAND记忆体市场，已成为主要参与者。例如，中国领先的记忆体公司之一长江储存科技（YMTC）正在国内出货少量 64 层 NAND，包括用于 SSD，并且正在开发 128 层生产，计划于 2021 年出货。
  • 此外，该地区也吸引了多家致力于非挥发性记忆体相关技术开发的新兴企业进行投资。例如，2021年4月，上海创星半导体有限公司在A轮前资金筹措中筹集了约1亿美元。本轮资金筹措由上海联和投资主导，Atlas Capital 和 KQ Capital 参投。该公司计划利用这笔投资生产电阻式随机存取记忆体（ReRAM）晶片和其他用于储存应用的晶片。
  • 该地区的公司正在利用非挥发性记忆体实现各种工业应用。 2021年11月，非挥发性记忆体（NVM）技术供应商富达科技宣布在上海华虹中半导体製造有限公司的180BCD（Z8）平台上推出产品名称为ZT的高品质eNVM（嵌入式非挥发性记忆体），支援10年150°C保存时间。
  • 此外，该地区在非挥发性记忆体（NVM）方面的研发活动正在增加。 2022年1月，三星电子宣布全球首次展示以MRAM（磁阻随机存取记忆体）为记忆体内运算。预计这些趋势将在预测期内推动亚太地区研究市场的成长。

非挥发性记忆体产业概况

非挥发性记忆体市场竞争激烈，有几家大型企业在竞争。本产业竞争对手之间的竞争主要取决于透过技术创新、市场渗透和竞争策略的强度来获得永续的竞争优势。这是一个资本密集型市场，因此退出障碍较高。该市场的主要参与者包括ROHM、意法半导体、富士通和英特尔公司。最近的市场发展趋势包括：

  • 2022年1月，SK海力士宣布完成收购英特尔NAND和固态硬碟（SSD）业务交易的第一阶段。该公司表示，已透过收购英特尔的SSD业务及其在中国大连的NAND快闪记忆体製造工厂完成了交易的第一阶段。
  • 2021 年 10 月 - NSCore Inc. 推出了 OTP+（一次性可编程），这是一种适用于物联网技术应用的非挥发性记忆体解决方案。根据该公司介绍，其40nm超低功耗OTP NVM IP解决方案可最大限度地减少新兴市场对关键物联网晶片进行再製造的需要。此外，与标准 OTP IP 解决方案不同，NSCore OTP+ 解决方案具有可重新编程和变更的功能。
  • 2021 年 7 月—美光科技宣布已开始批量出货全球首款 176 层 NAND 通用快闪储存 (UFS) 3.1 行动解决方案。美光的 UFS 3.1 独立行动 NAND 记忆体专为高阶和旗舰行动电话而设计，与前几代产品相比，连续式写入和随机读取速度提高了 75%，释放了5G 的潜力。

其他福利：

  • Excel 格式的市场预测 (ME) 表
  • 3 个月的分析师支持

目录

第 1 章 简介

  • 研究假设和市场定义
  • 研究范围

第二章调查方法

第三章执行摘要

第四章 市场洞察

  • 市场概况
  • 产业吸引力－波特五力分析
    • 新进入者的威胁
    • 买家的议价能力
    • 供应商的议价能力
    • 替代品的威胁
    • 竞争对手之间的竞争强度
  • COVID-19 市场影响
  • 产业价值链分析

第五章 市场动态

  • 市场驱动因素
    • 连网型设备和穿戴式装置对非挥发性记忆体的需求不断增加
    • 企业储存应用需求不断成长
  • 市场挑战
    • 低写入耐久性

第六章 市场细分

  • 按类型
    • 传统非挥发性记忆体
      • 快闪记忆体
      • EEPROM
      • SRAM
      • EPROM
      • 其他常规非挥发性记忆体
    • 下一代非挥发性记忆体
      • MRAM
      • FRAM
      • 电阻式记忆体
      • 3D-X 点
      • 奈米RAM
      • 其他下一代非挥发性记忆体
  • 按最终用户产业
    • 消费性电子产品
    • 零售
    • 资讯科技和电讯
    • 卫生保健
    • 其他最终用户产业
  • 按地区
    • 北美洲
      • 美国
      • 加拿大
    • 欧洲
      • 英国
      • 德国
      • 法国
      • 其他欧洲国家
    • 亚太地区
      • 中国
      • 日本
      • 韩国
      • 印度
      • 其他亚太地区
    • 拉丁美洲
    • 中东和非洲

第七章 竞争格局

  • 公司简介
    • ROHM Co. Ltd
    • STMicroelectronics NV
    • Maxim Integrated Products Inc.
    • Fujitsu Ltd
    • Intel Corporation
    • Honeywell International Inc.
    • Micron technologies Inc.
    • Samsung Electronics Co. Ltd
    • Crossbar Inc.
    • Infineon Technologies AG
    • Avalanche Technologies Inc.
    • Adesto Technologies Corporation（Dialog Semiconductor PLC）

第八章投资分析

第九章：市场的未来

简介目录
Product Code: 66954

The Non-Volatile Memory Market size is estimated at USD 105.64 billion in 2025, and is expected to reach USD 184.18 billion by 2030, at a CAGR of 11.76% during the forecast period (2025-2030).

Non-Volatile Memory - Market - IMG1

In the last decade, the growth of the portable systems market attracted the interest of the semiconductor industry in non-volatile memory (NVM) technologies for mass storage applications. Demand for greater efficiency, faster memory access, and low-power consumption drive the NVM market growth.

Key Highlights

  • In the flourishing consumer electronics industry, users expect their devices to continually become more powerful, provide new functionality with incredible speed, and store more movies, pictures, and music. While flash enabled substantial innovation during the past few decades, a new generation of memory is required as flash hits technology roadblocks, preventing it from scaling much further.
  • The adoption of flash memories in consumer electronics due to their low price and power consumption is significant for the market's growth. NVM is used in smartphones and wearable devices to enable more storage and faster memory access.
  • The increasing research activities in this space are also driving the market's growth. For instance, in March 2021, Infineon Technologies LLC announced the launch of second-generation non-volatile Static RAMs that are qualified for QML-Q and high-reliability industrial specifications to mainly support non-volatile code storage in harsh environments, including aerospace and industrial applications.
  • Similarly, in early 2021, Samsung announced the improvement of its MRAM's MTJ function and advanced its 14 nm process to support its flash-type embedded MRAM designed to increase the write speed and density. In addition, the company targets the IC emerging NVM's application in wearables, microcontrollers, and IoT devices.
  • However, troubles with non-volatile memories in the market are often caused by the read/write endurance and data retention characteristics. For instance, Phase-change memories (PCMs) and flash memories are examples of NVM's with limited endurance. These NVM's have little endurance because after undergoing several writing cycles (RESET cycles for PCM, program/erase cycles for flash memory), the memory cells wear out and can no longer reliably store information.
  • The COVID-19 outbreak negatively impacted several end-user industries of non-volatile memories, such as the smartphone industry. Spurred demand for server and PC memory for stay-at-home activities, driven by important megatrends like cloud computing, AI, and the IoT, is expected to support the growth of non-volatile memory during the forecast period.

Non-Volatile Memory Market Trends

Flash Memory is Expected to Hold a Significant Market Share

  • The growing demand and penetration of consumer electronics led to device flash memory applications. This memory type finds applications in laptops, GPS, electronic musical instruments, digital cameras, cell phones, and many others. Additionally, it is extensively adopted by data center solution vendors. With exponential growth in the adoption of cloud solutions, the demand for data centers is also surging.
  • Further, with increasing propensity toward AI/ML applications and IoT devices that require high low latency and high throughput cloud storage, flash storage and enterprise data centers are optimized to train deep neural networks. The growing number and size of data centers are expected to augment demand further.
  • To cater to the growing demand, vendors operating in the market focus on developing new solutions with better capabilities. For instance, in February 2021, Kioxia Corporation and Western Digital Corp. announced the development of a sixth-generation, 162-layer 3D flash memory technology. This was the company's highest density and most advanced 3D flash memory technology that utilizes many technology and manufacturing innovations.
  • Furthermore, NOR Flash memory is also gaining traction due to ultra-low-power needs. For instance, in January 2022, Infineon Technologies announced additional development tools to support its family of SEMPER NOR Flash devices. It will further help developers to quickly design safety-critical and inherently secure automotive, industrial, and communication systems.
  • Similarly, in November 2021, Macronix International Co., Ltd. announced itself as the industry's first Serial NOR Flash memory manufacturer to bring 1.2V devices to mass production. According to the company, the ultra-low-power (ULP), high-speed 120MHz MX25S Serial NOR Flash memories are poised to usher in a new generation of products targeted at applications that include Internet of Things (IoT), wireless communications technologies, WiFi, and Narrowband IoT systems, hand-held and Bluetooth devices, and consumer applications.

Asia Pacific is Expected to Account for a Significant Market Share

  • The construction of new infrastructure, including data centers, has been growing across various countries of the Asia Pacific region, owing to a surge in demand for online entertainment, telecommuting, and video and voice call services. With the fast development of the digital economy, building large big data centers in countries such as China and India is becoming necessary.
  • China has emerged as the leading country owing to its aggressive approach to the NAND memory business. For instance, Yangtze Memory Technologies Co. Ltd (YMTC), one of China's major memory companies, had shipped 64 layers of NAND domestically in low volumes, including SSDs, with 128-layer production in development and shipments in 2021.
  • Furthermore, startups in the region that are engaged in developing technologies related to non-volatile memory are receiving several investments. For instance, in April 2021, InnoStar Semiconductor (Shanghai) Co. Ltd raised around USD 100 million in a pre-series A financing round. The funding round was led by Shanghai Lianhe Investment, and new investors who joined the round included state-backed Atlas Capital and KQ Capital. The company aims to use the investment to produce resistive random-access memory (ReRAM) chips and other chips for storage applications.
  • Companies in the region are utilizing non-volatile memory for various industrial applications. In November 2021, Floadia Corporation, a provider of Non-Volatile Memory (NVM) technology, announced the availability of its high-quality eNVM (embedded Non-volatile Memory), with product name ZT, supporting 150 degrees C retention of 10 years, in Shanghai Huahong Grace Semiconductor Manufacturing Corporation 180BCD (Z8) platform.
  • Furthermore, the region is also witnessing an increase in R&D activities in Non-Volatile Memory (NVM). In January 2022, Samsung Electronics announced the demonstration of one of the world's first in-memory computing based on MRAM (Magnetoresistive Random Access Memory). Such trends are expected to drive the growth of the studied market in the Asia Pacific region during the forecast period.

Non-Volatile Memory Industry Overview

The non-volatile memory market is competitive and consists of several major players. The competitive rivalry in this industry is primarily dependent on sustainable competitive advantage through innovation, levels of market penetration, and power of competitive strategy. Since the market is capital intensive, the barriers to exit are high as well. Some of the major players operating in the market include Rohm Co. Ltd, STMicroelectronics NV, Fujitsu ltd, and Intel Corporation. Some of the recent developments in the market are:

  • January 2022 - SK Hynix Inc. announced the completion of the first phase of the transaction to acquire Intel's NAND and solid-state drive (SSD) business. According to the company, it has closed the first phase of the transaction by acquiring Intel's SSD business and the Dalian NAND flash manufacturing facility in China.
  • October 2021 - NSCore Inc. introduced OTP+, One-Time-Programmable Plus, a non-volatile memory solution for IoT technology applications. According to the company, the 40 nm Ultra-Low-Power OTP NVM IP Solution can minimize the need to re-spin the fabrication of an IoT chip, which is critical in the emerging market. In addition, the NSCore OTP+ solution can be reprogramed and modified, unlike standard OTP Ip solutions.
  • July 2021 - Micron Technology announced that it began mass shipping the world's first 176-layer NAND Universal Flash Storage (UFS) 3.1 mobile solution. Designed for high-end and flagship phones, Micron's UFS 3.1 discrete mobile NAND memory unlocks the potential of 5G with sequential write and random read speeds of up to 75% compared to previous generations.

Additional Benefits:

  • The market estimate (ME) sheet in Excel format
  • 3 months of analyst support

TABLE OF CONTENTS

1 INTRODUCTION

  • 1.1 Study Assumptions and Market Definition
  • 1.2 Scope of the Study

2 RESEARCH METHODOLOGY

3 EXECUTIVE SUMMARY

4 MARKET INSIGHTS

  • 4.1 Market Overview
  • 4.2 Industry Attractiveness - Porter's Five Forces Analysis
    • 4.2.1 Threat of New Entrants
    • 4.2.2 Bargaining Power of Buyers
    • 4.2.3 Bargaining Power of Suppliers
    • 4.2.4 Threat of Substitute Products
    • 4.2.5 Intensity of Competitive Rivalry
  • 4.3 Impact of COVID-19 on the Market
  • 4.4 Industry Value Chain Analysis

5 MARKET DYNAMICS

  • 5.1 Market Drivers
    • 5.1.1 Growing Demand for Non-volatile Memory in Connected and Wearable Devices
    • 5.1.2 Increasing Demand for Enterprise Storage Applications
  • 5.2 Market Challenges
    • 5.2.1 Low Write Endurance Rate

6 MARKET SEGMENTATION

  • 6.1 By Type
    • 6.1.1 Traditional Non-volatile Memory
      • 6.1.1.1 Flash Memory
      • 6.1.1.2 EEPROM
      • 6.1.1.3 SRAM
      • 6.1.1.4 EPROM
      • 6.1.1.5 Other Traditional Non-volatile Memories
    • 6.1.2 Next-generation Non-volatile Memory
      • 6.1.2.1 MRAM
      • 6.1.2.2 FRAM
      • 6.1.2.3 ReRAM
      • 6.1.2.4 3D-X Point
      • 6.1.2.5 Nano RAM
      • 6.1.2.6 Other Next-generation Non-volatile Memories
  • 6.2 By End-user Industry
    • 6.2.1 Consumer Electronics
    • 6.2.2 Retail
    • 6.2.3 IT and Telecom
    • 6.2.4 Healthcare
    • 6.2.5 Other End-user Industries
  • 6.3 By Geography
    • 6.3.1 North America
      • 6.3.1.1 United States
      • 6.3.1.2 Canada
    • 6.3.2 Europe
      • 6.3.2.1 United Kingdom
      • 6.3.2.2 Germany
      • 6.3.2.3 France
      • 6.3.2.4 Rest of Europe
    • 6.3.3 Asia Pacific
      • 6.3.3.1 China
      • 6.3.3.2 Japan
      • 6.3.3.3 South Korea
      • 6.3.3.4 India
      • 6.3.3.5 Rest of Asia Pacific
    • 6.3.4 Latin America
    • 6.3.5 Middle East and Africa

7 COMPETITIVE LANDSCAPE

  • 7.1 Company Profiles
    • 7.1.1 ROHM Co. Ltd
    • 7.1.2 STMicroelectronics NV
    • 7.1.3 Maxim Integrated Products Inc.
    • 7.1.4 Fujitsu Ltd
    • 7.1.5 Intel Corporation
    • 7.1.6 Honeywell International Inc.
    • 7.1.7 Micron technologies Inc.
    • 7.1.8 Samsung Electronics Co. Ltd
    • 7.1.9 Crossbar Inc.
    • 7.1.10 Infineon Technologies AG
    • 7.1.11 Avalanche Technologies Inc.
    • 7.1.12 Adesto Technologies Corporation (Dialog Semiconductor PLC)

8 INVESTMENT ANALYSIS

9 FUTURE OF THE MARKET