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半导体生产设备电力设备化合物半导体

市场调查报告书

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1845684

全球碳化硅半导体市场规模（依产品类型、应用、晶圆尺寸、区域范围和预测）

Global Silicon Carbide Semiconductor Market Size By Product Type, By Application, By Wafer Size, By Geographic Scope And Forecast

出版日期: 2025年09月10日 | 出版商:

Verified Market Research | 英文 202 Pages | 商品交期: 2-3个工作天内

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简介目录

碳化硅半导体市场规模及预测

2024 年碳化硅半导体市场规模为 8.0293 亿美元，预计 2031 年将达到 26.1424 亿美元，2024 年至 2031 年的复合年增长率为 15.90%。

碳化硅 (SiC) 半导体是一种以碳化硅为核心半导体材料的先进电子元件。由于其性能优于传统的硅基半导体，因此碳化硅半导体在电力电子领域尤其重要。

碳化硅是由硅 (Si) 和碳 (C) 组成的复合半导体，被归类为宽能带隙(WBG) 材料。 SiC 的固有特性源自于其强大的物理键，这赋予了其卓越的机械、化学和热稳定性。

这种宽能带隙材料可以承受比硅高得多的结温，通常超过 200°C，而这项特性对于需要高耐热性的应用至关重要。

碳化硅在电力电子领域的应用得益于其低漂移区电阻，这对于高压功率元件至关重要，因为它可以降低功率损耗并提高效率。与硅基半导体相比，碳化硅基半导体具有优异的导热性、更高的电子迁移率和更低的功率损耗。

这些特性使得碳化硅二极体和电晶体能够在高频率和高温下可靠运行，使其成为高功率应用的理想选择。

碳化硅半导体在电力电子领域变革和促进永续性方面具有巨大潜力。其提高能源效率和耐受恶劣条件的能力使其成为未来创新的关键技术。

材料科学、整合技术的不断进步以及人们对节能解决方案日益增长的兴趣将巩固 SiC 作为下一代电子技术发展基础组件的地位。

随着对更有效率、更可靠的电力系统的需求不断增加，SiC 将在塑造更永续的技术格局方面发挥越来越重要的作用。

SiC 技术的不断发展凸显了其在未来电子领域的重要性，并有望推动各行各业的进步。

全球碳化硅半导体市场动态

影响全球碳化硅半导体市场的关键市场动态是：

关键市场驱动因素

提升高功率应用性能：碳化硅 (SiC) 半导体以其在高温和高压下的卓越性能而闻名。其宽禁带能量和低本征载子浓度使其能够在比硅基半导体高得多的温度下有效运作。这一特性使 SiC 成为高功率应用的理想选择，从而提高效率和功率密度。

高温环境整合：SiC 能够在高温下无冷却运行，这在汽车、航太和深井钻探等行业中具有显着优势。 SiC 的高击穿场和热导率使其能够实现卓越的功率密度和运行效率，从而支援这些高要求领域的进步。

电源管理的进步：SiC 高功率固态开关显着提升了电源管理和控制的效率。透过实现更有效率的电源管理系统，SiC 电子产品可以帮助公共电力系统满足日益增长的电力需求，而无需额外增加发电容量。此外，它们还可以透过先进的「智慧」电源管理系统来提高电能品质和运作可靠性。

增强型航空航天技术：在飞机上使用碳化硅半导体可带来显着优势，包括减轻重量、降低维护要求、降低排放气体以及提高燃油效率。透过以能够承受恶劣条件的电子机械控制设备取代传统的液压控制设备装置和辅助动力装置，碳化硅技术支援开发更有效率、更可靠的飞机系统。

推动电动车 (EV) 产业发展：电动车的普及是推动 SiC 半导体需求成长的主要因素。基于 SiC 的电力电子技术能够加快电动车的充电速度、延长续航里程并提升整体效能。政府为减少温室气体排放和推广电动车而提供的激励措施和补贴将进一步刺激 SiC 半导体的需求。

再生能源来源的兴起：太阳能和风能等可再生能源领域的成长正在推动对碳化硅半导体的需求。碳化硅元件提高了电力转换和电网整合系统的效率和可靠性，促进了可再生能源併入电网。

工业自动化和物联网应用：工业自动化和物联网 (IoT) 应用的兴起推动了对碳化硅 (SiC) 半导体的需求。这些装置具有更高的功率密度和耐温性，从而提高了自动化系统和物联网设备的效能和可靠性。

升级通讯基础设施：5G网路的部署和通讯基础设施的扩展将推动高频和高功率应用对碳化硅半导体的需求。碳化硅元件可在基地台和网路设备中实现高效的功率放大和讯号处理，从而支援无线通讯的发展。

主要挑战

供应链中断：供应链中断，包括原材料短缺、製造流程中断和物流挑战，可能会影响碳化硅 (SiC) 半导体元件的供应和成本。这些问题可能会阻碍市场成长、延迟计划进度，并影响整体市场稳定。

技术挑战：儘管取得了重大进展，SiC半导体技术仍面临技术挑战。晶体结构缺陷、製程变异性和可靠性等问题可能会限制SiC元件的性能、产量比率和扩充性。这些技术障碍可能会阻碍SiC半导体的广泛应用。

来自替代材料的竞争：SiC 半导体在某些应用领域面临来自替代材料的竞争，例如氮化镓 (GaN) 和硅 (Si)，这些材料可能提供可比较的性能特征或成本优势，这可能会限制 SiC 半导体的市场份额和成长前景。

初始成本高：SiC 半导体通常比硅基半导体更昂贵。 SiC 基系统所需的高额初始投资（包括昂贵的电源模组和装置）可能会让一些用户望而却步，尤其是在对成本敏感的行业。

产能限制：SiC晶圆和装置的产能通常低于硅基替代品。 SiC半导体需求的不断增长可能导致供应瓶颈，从而延长前置作业时间，并导致产品开发和部署延迟。

製造流程复杂：碳化硅晶圆和元件的製造比硅基半导体更复杂，资源消耗也更大。这种复杂性增加了製造成本，并对维持产品品质的一致性提出了挑战，尤其是在大规模生产的情况下。

整合和相容性挑战：将基于 SiC 的组件整合到现有系统和基础设施中可能会带来相容性挑战，尤其是在以硅基技术为主的行业中。 SiC 半导体独特的电学和热学特性通常需要额外的工程设计和投资，这可能会阻碍其采用率。

对长期可靠性的担忧：儘管 SiC 半导体具有许多优势，但潜在买家可能仍对其长期可靠性和使用寿命有所顾虑。为了实现广泛应用，必须透过大量的测试和检验程序，建立对 SiC 装置耐用性和性能的信心。

主要趋势

汽车产业电气化：向电动车 (EV) 的转型是推动碳化硅 (SiC) 半导体需求的关键趋势。 SiC 装置在电动车动力传动系统中发挥关键作用，可提高效率和性能。它们在充电基础设施和电池管理系统中也至关重要，可提供电动车快速充电和可靠运行所需的高功率密度和热稳定性。

可再生能源的扩张：太阳能和风能等可再生能源的日益普及是SiC半导体市场的另一个好趋势。 SiC装置对于高效能的电力转换和电网整合至关重要，有助于可再生能源可靠有效地融入电网。其卓越的效率和温度控管能力为可再生能源系统的扩充性和性能奠定了基础。

工业应用的成长：SiC 半导体在各种工业应用中日益受到青睐，包括马达驱动、电源和工业自动化。 SiC 半导体能够在恶劣环境下工作、耐高温和高压，使其成为严苛工业环境的理想选择。这一趋势凸显了 SiC 技术在提高工业流程效率和可靠性方面日益广泛的应用。

通讯领域的进步：通讯业对更高数据传输和更节能基础设施的需求激增，推动了基于 SiC 的组件的采用。 SiC 功率放大器和其他装置正越来越多地用于支援 5G 等先进通讯技术，它们提供高效的功率放大和讯号处理功能，这对于提升网路效能和降低能耗至关重要。

提升材料品质：持续的研发工作致力于提升碳化硅材料的品质。这些进展显着提升了装置的性能和可靠性。材料纯度的提高和晶体生长控制的改进，有助于开发具有卓越电学和热学性能的碳化硅半导体，这对于高性能应用至关重要。

装置结构创新：新型 SiC 装置结构和拓扑的开发旨在满足特定应用需求并提升整体效率。先进的 MOSFET 设计、肖特基二极体和沟槽技术等创新技术正在不断涌现，以提升 SiC 装置性能。这些创新能够满足从汽车到工业再到可再生能源应用等各行各业不断变化的需求。

先进封装与整合：先进封装技术的趋势正在助力 SiC 装置实现更佳的温度控管并提升功率密度。增强型热感界面和整合冷却系统等新型封装解决方案正在提升 SiC 半导体的性能和可靠性。这一趋势将拓宽 SiC 装置的应用范围，使其能够应用于更小、更严苛的环境。

Silicon Carbide (SiC) semiconductors are advanced electronic components that utilize silicon carbide as their core semiconductor material. These semiconductors are particularly valued in power electronics due to their superior properties and performance advantages over traditional silicon-based semiconductors.

Silicon carbide, a compound semiconductor composed of silicon (Si) and carbon (C), is categorized within the wide bandgap (WBG) material class. The intrinsic properties of SiC stem from its robust physical bonding, which imparts remarkable mechanical, chemical, and thermal stability.

This wide bandgap material can withstand junction temperatures significantly higher than those manageable by silicon, often exceeding 200°C. This characteristic is crucial for applications requiring high thermal endurance.

Silicon carbide in power electronics is its low drift region resistance. This attribute is essential for high-voltage power devices, as it reduces power losses and enhances efficiency. SiC-based semiconductors exhibit superior thermal conductivity, increased electron mobility, and reduced power dissipation compared to silicon counterparts.

These properties enable SiC diodes and transistors to operate reliably at high frequencies and temperatures, making them ideal for demanding power applications.

SiC semiconductors hold substantial potential for transforming the field of power electronics and promoting sustainability. Their ability to enhance energy efficiency and withstand extreme conditions positions them as a key technology for future innovations.

Ongoing advancements in material science, integration techniques, and a growing focus on energy-efficient solutions will likely solidify SiC's role as a foundational component in developing next-generation electronic technologies.

As the demand for higher efficiency and more reliable power systems grows, SiC's role in shaping a more sustainable technological landscape becomes increasingly significant.

The continuous evolution of SiC technology promises to drive advancements across various industries, highlighting its importance in the future of electronics.

Global Silicon Carbide Semiconductor Market Dynamics

The key market dynamics that are shaping the global silicon carbide semiconductor market include:

Key Market Drivers

Enhanced Performance in High-Power Applications: Silicon carbide (SiC) semiconductors are renowned for their superior performance in handling high temperatures and voltages. Their wide bandgap energy and low intrinsic carrier concentration enable them to function effectively at temperatures significantly higher than silicon-based semiconductors. This capability makes SiC ideal for high-power applications, providing increased efficiency and power density.

Integration in High-Temperature Environments: SiC's ability to operate uncooled at elevated temperatures provides substantial advantages in industries such as automotive, aerospace, and deep-well drilling. The high breakdown field and thermal conductivity of SiC allow it to achieve exceptional power densities and operational efficiencies, supporting advancements in these demanding fields.

Advancements in Electric Power Management: SiC high-power solid-state switches offer significant improvements in efficiency for electric power management and control. By enabling more efficient power management systems, SiC electronics can help public power systems meet increasing consumer electricity demands without additional generation capacity. They also enhance power quality and operational reliability through advanced "smart" power management systems.

Boosting Aviation and Aerospace Technologies: The use of SiC semiconductors in aviation can lead to considerable benefits, including weight savings, reduced maintenance requirements, lower emissions, and improved fuel efficiency. By replacing traditional hydraulic controls and auxiliary power units with smart electromechanical controls that can withstand harsh conditions, SiC technology supports the development of more efficient and reliable aircraft systems.

Driving the Electric Vehicle (EV) Industry: The shift towards electric vehicles is a major driver for SiC semiconductor demand. SiC-based power electronics enable faster charging, extended driving ranges, and improved overall performance in EVs. Government incentives and subsidies to reduce greenhouse gas emissions and promote electric vehicles further stimulate demand for SiC semiconductors.

Expansion of Renewable Energy Sources: The growth of renewable energy sectors, such as solar and wind power, is boosting the demand for SiC semiconductors. SiC devices enhance the efficiency and reliability of power conversion and grid integration systems, facilitating the integration of renewable energy into the power grid.

Industrial Automation and IoT Adoption: The rise of industrial automation and Internet of Things (IoT) applications is increasing the need for SiC semiconductors. These devices offer higher power density and temperature tolerance, which improve the performance and reliability of automation systems and IoT devices.

Telecommunications Infrastructure Upgrades: The deployment of 5G networks and the expansion of telecommunications infrastructure drive the demand for SiC semiconductors in high-frequency and high-power applications. SiC devices enable efficient power amplification and signal processing in base stations and network equipment, supporting the growth of wireless communications.

Key Challenges

Supply Chain Disruptions: Interruptions in the supply chain, including shortages of raw materials, manufacturing process disruptions, or logistical challenges, can affect the availability and cost of silicon carbide (SiC) semiconductor components. These issues may hinder market growth and delay project timelines, impacting the overall stability of the market.

Technological Challenges: Despite significant advancements, SiC semiconductor technology still encounters technical challenges. Issues such as defects in crystal structure, process variability, and reliability concerns can limit the performance, yield, and scalability of SiC devices. These technological hurdles may hinder the widespread adoption of SiC semiconductors.

Competition from Alternative Materials: SiC semiconductors face competition from alternative materials like gallium nitride (GaN) and silicon (Si) in certain applications. Competing materials may offer comparable performance characteristics or cost advantages, potentially restricting the market share and growth prospects of SiC semiconductors.

High Initial Costs: SiC semiconductors are often more expensive than silicon-based counterparts. The higher initial investment required for SiC-based systems, including costly power modules and devices, may deter some users, especially those in cost-sensitive industries.

Production Capacity Constraints: SiC wafers and devices generally have lower production capacities compared to silicon-based alternatives. Increased demand for SiC semiconductors may lead to supply bottlenecks, resulting in longer lead times and potential delays in product development and deployment.

Complex Manufacturing Processes: The manufacturing of SiC wafers and devices is more complex and resource-intensive than that of silicon-based semiconductors. This complexity can raise production costs and pose challenges in maintaining consistent product quality, particularly in large-scale production.

Integration and Compatibility Issues: Integrating SiC-based components into existing systems and infrastructure, particularly in industries dominated by silicon-based technologies, may present compatibility issues. Additional engineering work and investment are often required to address the unique electrical and thermal properties of SiC semiconductors, potentially hindering adoption rates.

Concerns About Long-Term Reliability: Despite their many advantages, potential buyers may remain concerned about the long-term reliability and lifetime of SiC semiconductors. Achieving widespread adoption requires building trust in the durability and performance of SiC devices through extensive testing and validation procedures.

Key Trends

Electrification of the Automotive Industry: The transition towards electric vehicles (EVs) is a significant trend driving the demand for silicon carbide (SiC) semiconductors. SiC devices play a crucial role in EV powertrains, enhancing efficiency and performance. They are also integral to charging infrastructure and battery management systems, providing the high power density and thermal stability needed for rapid charging and reliable operation in electric vehicles.

Expansion in Renewable Energy: The increasing adoption of renewable energy sources, such as solar and wind power, is another major trend benefiting the SiC semiconductor market. SiC devices are essential for efficient power conversion and grid integration, facilitating the reliable and effective integration of renewable energy into the power grid. Their superior efficiency and thermal management capabilities support the scalability and performance of renewable energy systems.

Growth in Industrial Applications: SiC semiconductors are gaining traction in various industrial applications, including motor drives, power supplies, and industrial automation. Their ability to operate in harsh environments, withstand high temperatures, and handle high voltages makes them ideal for demanding industrial settings. This trend highlights the expanding use of SiC technology in improving the efficiency and reliability of industrial processes.

Advancements in Telecommunications: The telecommunications sector is experiencing a surge in demand for higher data rates and energy-efficient infrastructure, driving the adoption of SiC-based components. SiC power amplifiers and other devices are increasingly used to support advanced communication technologies, such as 5G, by providing efficient power amplification and signal processing, which are critical for enhancing network performance and reducing energy consumption.

Improvements in Material Quality: Ongoing research and development efforts are focused on enhancing the quality of SiC materials. These advancements are leading to significant improvements in device performance and reliability. Higher material purity and better control over crystal growth are contributing to the development of SiC semiconductors with superior electrical and thermal properties, which are essential for high-performance applications.

Innovation in Device Structures: The development of new SiC device structures and topologies is addressing specific application requirements and improving overall efficiency. Innovations such as advanced MOSFET designs, Schottky diodes, and trench technologies are being introduced to enhance the performance of SiC devices. These innovations are tailored to meet the evolving needs of various sectors, from automotive to industrial and renewable energy applications.

Advancements in Packaging and Integration: The trend towards advanced packaging technologies is enabling better thermal management and higher power density for SiC devices. New packaging solutions, such as enhanced thermal interfaces and integrated cooling systems, are improving the performance and reliability of SiC semiconductors. This trend is expanding the range of applications for SiC devices by allowing them to be used in more compact and demanding environments.

Global Silicon Carbide Semiconductor Market Regional Analysis

Here is a more detailed regional analysis of the global silicon carbide semiconductor market:

Asia Pacific

Asia Pacific substantially dominates the global silicon carbide semiconductor market driven by the region's home to a multitude of leading semiconductor manufacturers and technology providers.

The concentration of major industry players in countries like China, Japan, South Korea, and Taiwan enhances the region's capability to drive innovation and scale production. These companies are at the forefront of developing and deploying SiC technology, thereby reinforcing the region's market leadership.

Significant investments in the development and manufacturing of SiC semiconductors are fueling the market's expansion in APAC. Private-sector investments and government-funded initiatives are focusing on enhancing SiC production capabilities and technological advancements.

These investments are critical for increasing production capacity, improving material quality, and accelerating the commercialization of new SiC applications.

APAC is a global hub for semiconductor manufacturing, with extensive infrastructure and expertise in this field. The region's established semiconductor ecosystem provides a robust foundation for the growth of SiC technology.

This includes advanced fabrication facilities, a skilled workforce, and a comprehensive supply chain that supports the efficient production and distribution of SiC semiconductors.

The Asia-Pacific region is experiencing rapid technological advancements, particularly in semiconductor technology. Innovations in SiC materials and device structures are emerging from the region, driving improvements in performance, efficiency, and reliability.

These advancements are crucial for expanding the range of applications for SiC semiconductors, from consumer electronics to automotive and renewable energy sectors.

The expansion of SiC production facilities within the APAC region. Major semiconductor manufacturers are investing in new plants and upgrading existing ones to increase their SiC production capacity.

The adoption of SiC technology is broadening to include innovative applications in consumer electronics and telecommunications. SiC devices are being integrated into advanced electronics and high-frequency telecommunications systems, enhancing performance and efficiency. This trend reflects the region's role as a leader in adopting and advancing cutting-edge technologies.

SiC semiconductors are increasingly being used in electric vehicle (EV) production and energy infrastructure projects within APAC. The technology supports improved power efficiency, faster charging, and enhanced performance in EVs, while also playing a critical role in energy conversion and grid management. The growing emphasis on sustainable and energy-efficient technologies is driving the adoption of SiC semiconductors in these areas.

North America

North America is anticipated to witness the fastest growth in the global silicon carbide semiconductor market during the forecast period. The region hosts prominent semiconductor companies such as Gene SiC Semiconductor and ON Semiconductor Corporation (ON Semi), which play a crucial role in the market.

These major players have extensive customer bases and significant influence in driving the adoption and development of SiC technology. Their established presence and operational scale are pivotal in expanding the market for SiC semiconductors in North America.

The concentration of leading semiconductor companies in North America facilitates the introduction and adoption of advanced SiC semiconductor devices by power electronics manufacturers.

These devices offer superior efficiency and performance, making them attractive for a wide range of applications. The increasing use of SiC technology is leading to its integration into various sectors, from consumer electronics to industrial and automotive applications.

Key regional firms are actively pursuing strategic initiatives to boost growth in the North American market. These efforts include substantial investments in research and development (R&D), forging strategic collaborations, and expanding production capacities.

By focusing on innovation and market penetration, these companies are accelerating the adoption of SiC technology and enhancing their market presence.

The rise in electric vehicle adoption is a significant driver for the SiC semiconductor market in North America. SiC technology is increasingly integrated into EV charging infrastructure and power management systems, offering benefits such as faster charging and improved efficiency. The demand for high-performance SiC devices in EV applications is contributing to the market's growth.

The increasing reliance on data centers for cloud computing and data storage is creating demand for high-efficiency SiC semiconductors. SiC technology is used in data center power supplies and cooling systems to improve energy efficiency and reduce operational costs. This trend is contributing to the growing market for SiC devices in the region.

Global Silicon Carbide Semiconductor Market: Segmentation Analysis

The Global Silicon Carbide Semiconductor Market is segmented based on Product Type, Application, Wafer Size, And Geography.

Silicon Carbide Semiconductor Market, By Product Type

SiC Power Devices

SiC Power Modules

SiC Power Discrete Devices

SiC Bare Die Devices

Based on the Product Type, the Global Silicon Carbide Semiconductor Market is bifurcated into SiC Power Devices, SiC Power Modules, SiC Power Discrete Devices, and SiC Bare Die Devices. The SiC power Modules segment leads the Global Silicon Carbide Semiconductor Market owing to their broad use in energy, e-mobility, and industrial applications. These modules are key to efficient power conversion, enhancing power efficiency, and reducing operational costs. Their integration with Schottky Barrier Diodes and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) significantly lowers switching losses compared to silicon-based alternatives. This efficiency advantage is expected to drive substantial market growth in the coming years.

Silicon Carbide Semiconductor Market, By Application

Automotive

Aerospace

Aerospace and Defense

Consumer Electronics

Industrial

Power Electronics

Based on the Application, the Global Silicon Carbide Semiconductor Market is bifurcated into Automotive, Aerospace, Aerospace and Defense, Consumer Electronics, Industrial, and Power Electronics. The automotive segment shows significant growth in the global silicon zarbide semiconductor market. In the automotive sector, silicon carbide semiconductors boost electric vehicle (EV) performance by providing higher power density and improved efficiency in motor drives and battery management systems. Key trends include their integration into next-generation EV platforms, autonomous vehicles, and charging infrastructure, reflecting the industry's shift toward electrification and sustainability

Silicon Carbide Semiconductor Market, By Wafer Size

1 inch to 4 inch

6 inches

8 inches

10 inches above

Based on the Wafer Size, the Global Silicon Carbide Semiconductor Market is bifurcated into 1 inch to 4 inch, 6 inches, 8 inches, and 10 inches above. 1-inch to 4-inch segment dominates the global silicon carbide semiconductor market. Silicon Carbide semiconductor wafers, ranging from 1 inch to 4 inches, are often utilized in niche applications due to their compact size. Current trends include the creation of specialized devices for industries like aerospace and telecommunications, where space is a critical factor. Furthermore, advancements in manufacturing processes are focused on enhancing yield rates and lowering costs, making these smaller wafers more economically feasible.

Silicon Carbide Semiconductor Market, By Geography

North America

Europe

Asia Pacific

Rest of the World

Based on Geography, the Global Silicon Carbide Semiconductor Market is classified into North America, Europe, Asia Pacific, and the Rest of the World. Asia Pacific substantially dominates the global silicon carbide semiconductor market driven by the region's home to a multitude of leading semiconductor manufacturers and technology providers. The concentration of major industry players in countries like China, Japan, South Korea, and Taiwan enhances the region's capability to drive innovation and scale production. These companies are at the forefront of developing and deploying SiC technology, thereby reinforcing the region's market leadership. Significant investments in the development and manufacturing of SiC semiconductors are fueling the market's expansion in APAC. Private-sector investments and government-funded initiatives are focusing on enhancing SiC production capabilities and technological advancements.

Key Players

The "Global Silicon Carbide Semiconductor Market" study report will provide valuable insight with an emphasis on the global market. The major players in the market are Wolfspeed, Infineon Technologies, ROHM Semiconductor, ON Semiconductor, STMicroelectronics, Mitsubishi Electric, GeneSiC Semiconductor, TT Electronics, and Vishay Intertechnology. This section offers in-depth analysis through a company overview, position analysis, the regional and industrial footprint of the company, and the ACE matrix for insightful competitive analysis. The section also provides an exhaustive analysis of the financial performances of mentioned players in the given market.

Our market analysis also entails a section solely dedicated to such major players wherein our analysts provide an insight into the financial statements of all the major players, along with its product benchmarking and SWOT analysis. The competitive landscape section also includes key development strategies, market share, and market ranking analysis of the above-mentioned players globally.

Silicon Carbide Semiconductor Market Latest Developments:
In March 2022, Toshiba Electronic Components and Storage Co., Ltd. announced a JPY 100 billion (USD 839 million) investment to expand its power component capacity.
In August 2021, ON Semiconductor Corporation (on semi) announced the acquisition of GT Advance Technologies Inc., a well-known manufacturer of SiC and sapphire materials. This strategic decision is intended to improve ON Semi's SiC supply capabilities, helping the company to fulfill growing customer demand for SiC-based products.
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1. Introduction

Market Definition
Market Segmentation
Research Methodology

2. Executive Summary

Key Findings
Market Overview
Market Highlights

3. Market Overview

Market Size and Growth Potential
Market Trends
Market Drivers
Market Restraints
Market Opportunities
Porter's Five Forces Analysis

4. Silicon Carbide Semiconductor Market, By Product Type

SiC Power Devices
SiC Power Modules
SiC Power Discrete Devices
SiC Bare Die Devices

5. Silicon Carbide Semiconductor Market, By Application

Automotive
Aerospace and Defense
Consumer Electronics
Industrial
Power Electronics

6. Silicon Carbide Semiconductor Market, By Wafer Size

2-Inch
4-Inch
6-Inch and Above

7. Regional Analysis

North America
United States
Canada
Mexico
Europe
United Kingdom
Germany
France
Italy
Asia-Pacific
China
Japan
India
Australia
Latin America
Brazil
Argentina
Chile
Middle East and Africa
South Africa
Saudi Arabia
UAE

8. Market Dynamics

Market Drivers
Market Restraints
Market Opportunities
Impact of COVID-19 on the Market

9. Competitive Landscape

Key Players
Market Share Analysis

10. Company Profiles

Wolfspeed
Infineon Technologies
ROHM Semiconductor
ON Semiconductor
STMicroelectronics
Mitsubishi Electric
GeneSiC Semiconductor
TT Electronics
Vishay Intertechnology

11. Market Outlook and Opportunities

Emerging Technologies
Future Market Trends
Investment Opportunities

12. Appendix

List of Abbreviations
Sources and References

02-2729-4219

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License/价格

全球碳化硅半导体市场规模（依产品类型、应用、晶圆尺寸、区域范围和预测）

Global Silicon Carbide Semiconductor Market Size By Product Type, By Application, By Wafer Size, By Geographic Scope And Forecast

碳化硅半导体市场规模及预测

全球碳化硅半导体市场动态

关键市场驱动因素

目录

第一章 引言

第二章执行摘要

第三章 市场概况

4. 碳化硅半导体市场（依产品类型）

5. 碳化硅半导体市场（依应用）

6. 碳化硅半导体市场（依晶圆尺寸）

第七章区域分析

第八章市场动态

第九章 竞争态势

第十章：公司简介

第十一章 市场展望与机会

第十二章 附录

Silicon Carbide Semiconductor Market Size And Forecast