2024-2031年GaN半导体装置市场（按类型、装置类型、应用和地区）

GaN半导体装置市场评估 - 2024-2031

智慧型手机、笔记型电脑等设备中高效能电力电子和无线射频 (RF) 组件的使用日益增多，推动了 GaN 半导体装置的普及。与传统的硅基元件相比，GaN 元件具有更高的效率、更快的开关速度和更高的热导率，因此预计 2024 年市场规模将超过 34.5 亿美元，到 2031 年将达到约 105.4 亿美元。

此外，GaN半导体装置在电动车动力传动系统和可再生能源系统中的日益普及也刺激了它们的应用。持续的研究和开发活动导致GaN元件的功能增强和成本降低，使市场在2024年至2031年期间的复合年增长率达到16.53%。

GaN半导体装置市场定义/概述

GaN（氮化镓）半导体元件是由宽能带隙材料氮化镓製成的电子元件。与硅相比，GaN具有优异的电学特性，包括高击穿电压、高热导率和快速开关。这些特性使GaN装置能够在更高的电压、频率和温度下有效运作。

GaN半导体装置广泛应用于各领域。在家用电子电器中，其高效率和紧凑的尺寸使其能够为充电器和适配器供电。在通讯，它们对于5G基础设施和卫星通讯系统中的高频、高功率应用至关重要。 GaN元件在汽车产业也占据重要地位，用于电动车动力传动系统和充电系统，并在可再生能源领域用于太阳能逆变器和风力发电机的高效功率转换。它们也应用于工业系统、雷达、电子战系统以及军事和航太领域。

对节能电力电子装置日益增长的需求将如何促进 GaN 半导体装置的采用？

对节能电力电子日益增长的需求推动了GaN半导体装置市场的发展。根据美国能源局的数据，与硅基替代品相比，基于GaN的功率元件可将能量损失降低高达50%。欧盟委员会报告称，2020年至2023年间，GaN在电力电子领域的应用将成长35%。这一趋势是由家用电子电器和汽车等各种应用对更高效率的需求所驱动。 2024年2月，英飞凌科技宣布将投资10亿美元扩大其GaN产能。同样，德克萨斯也于2024年4月宣布推出一系列以GaN为基础的新型电源管理IC，瞄准电动车市场。

5G基础设施的扩张正在推动对GaN射频元件的需求。全球行动供应商协会报告称，2023年部署的5G基地台台中，60%将使用基于GaN的射频功率放大器。美国联邦通讯委员会指出，2021年至2023年，用于无线基础设施的GaN射频装置出货量将成长40%。这一增长得益于GaN在高频应用的卓越性能。 2024年3月，Qorvo宣布推出一系列针对5G毫米波应用的全新GaN-on-SiC射频解决方案。 2024年5月，恩智浦半导体与一家大型通讯设备製造商合作，开发下一代基于GaN的5G大规模MIMO系统。

在汽车产业，向电动车和自动驾驶汽车的转变正在推动GaN的应用。美国运输部预测，到2025年，30%的电动车将使用GaN装置。欧洲汽车工业协会的报告预测，从2022年到2024年，电动车中基于GaN的电力电子设备将成长55%。这一趋势得益于GaN能够提高功率转换效率并减少整体系统尺寸。 2024年1月，安森美半导体宣布推出电动车车用充电器和DC-DC转换器的全面GaN解决方案。 2024年6月，纳维半导体宣布与一家大型汽车製造商建立策略合作伙伴关係，共同开发下一代电动车的基于GaN的动力传动系统。

GaN半导体装置的供应链是否有限？

GaN半导体装置市场的发展受到其供应链不如硅成熟度的限制。 GaN材料和元件的供应有限，导致潜在的供应限制和成本上升。供应链的不成熟可能导致前置作业时间延长和供货问题，进而影响生产计划和可扩展性。

将 GaN 装置整合到现有的硅基系统中可能非常复杂且成本高昂。由于材料和性能特性存在显着差异，需要进行大量的重新设计和调整。这种复杂性增加了实施时间和成本，使企业难以无缝过渡到 GaN 技术。

GaN 面临着来自另一种宽能带隙材料碳化硅 (SiC) 的激烈竞争。 SiC 装置已在高功率应用中获得广泛认可，并具有高热导率和坚固耐用等优势。这种竞争可能会限制 GaN 装置的成长潜力，尤其是在 SiC 占据强势地位的市场中。

儘管 GaN 装置性能卓越，但它仍是一个相对较新的市场，因此其采用较为谨慎：潜在用户可能会因为没有经过广泛的检验和可靠性证明而犹豫不决，从而导致市场渗透速度缓慢，因为行业需要时间来测试和信任 GaN 装置的性能。

目录

第一章 引言

• 市场定义
• 市场区隔
• 调查方法

第二章执行摘要

• 主要发现
• 市场概况
• 市集亮点

第三章 市场概况

• 市场规模和成长潜力
• 市场趋势
• 市场驱动因素
• 市场限制
• 市场机会
• 波特五力分析

第四章 GaN半导体装置市场（按类型）

• 功率半导体
• 光电半导体

第五章 GaN半导体装置市场（依元件类型）

• 电晶体
• 二极体

第六章 GaN半导体装置市场（依应用）

• 电力电子
• 射频设备
• 对于汽车

第七章区域分析

• 北美洲
• 美国
• 加拿大
• 墨西哥
• 欧洲
• 英国
• 德国
• 法国
• 义大利
• 亚太地区
• 中国
• 日本
• 印度
• 澳洲
• 拉丁美洲
• 巴西
• 阿根廷
• 智利
• 中东和非洲
• 南非
• 沙乌地阿拉伯
• 阿拉伯聯合大公国

第八章市场动态

• 市场驱动因素
• 市场限制
• 市场机会
• COVID-19 市场影响

第九章 竞争态势

• 主要企业
• 市占率分析

第十章：公司简介

• Wolfspeed, Inc.
• Sumitomo Electric Industries, Ltd.
• Qorvo, Inc.
• MACOM Technology Solutions Holdings, Inc.
• Infineon Technologies AG
• GaN Systems, Inc.
• Efficient Power Conversion Corporation（EPC）
• Toshiba Electronic Devices & Storage Corporation
• NXP Semiconductors
• Texas Instruments Incorporated

第十一章 市场展望与机会

• 新兴技术
• 未来市场趋势
• 投资机会

第十二章 附录

• 简称列表
• 来源和参考文献

GaN Semiconductor Device Market Valuation - 2024-2031

Increased use in high-performance power electronics and RF (radio frequency) components for devices like smartphones and laptops are propelling the adoption of GaN semiconductor device. GaN devices offer higher efficiency, faster switching speeds, and higher thermal conductivity compared to traditional silicon-based devices which is driving the market size surpass USD 3.45 Billion valued in 2024 to reach a valuation of around USD 10.54 Billion by 2031.

In addition to this, rising adoption in electric vehicle powertrains and renewable energy systems is spurring up the adoption of GaN semiconductor device. Ongoing research and development activities leading to enhanced GaN device capabilities and reduced costs is enabling the market grow at a CAGR of 16.53% from 2024 to 2031.

GaN Semiconductor Device Market: Definition/ Overview

GaN (Gallium Nitride) semiconductor devices are electronic components made from gallium nitride, a wide bandgap material. GaN offers superior electrical properties compared to silicon, such as higher breakdown voltage, greater thermal conductivity, and faster switching speeds. These properties make GaN devices highly efficient and capable of operating at higher voltages, frequencies, and temperatures.

GaN semiconductor devices are used across various sectors. In consumer electronics, the power chargers and adapters due to their efficiency and compact size. In telecommunications, they are integral to 5G infrastructure and satellite communication systems for high-frequency and high-power applications. GaN devices are also prominent in the automotive industry for electric vehicle powertrains and charging systems, and in renewable energy for efficient power conversion in solar inverters and wind turbines. Additionally, they find applications in industrial systems, military and aerospace for radar, and electronic warfare systems.

How will Growing Demand for Energy-Efficient Power Electronics Increase Adoption of GaN Semiconductor Device?

The growing demand for energy-efficient power electronics is driving the GaN semiconductor device market. According to the U.S. Department of Energy, GaN-based power devices can reduce energy losses by up to 50% compared to silicon alternatives. The European Commission reported that GaN adoption in power electronics increased by 35% between 2020 and 2023. This trend is fueled by the need for higher efficiency in various applications, including consumer electronics and automotive. In February 2024, Infineon Technologies announced a $1 billion investment to expand its GaN production capacity. Similarly, Texas Instruments introduced a new line of GaN-based power management ICs in April 2024, targeting the electric vehicle market.

The expansion of 5G infrastructure is boosting the demand for GaN RF devices. The Global Mobile Suppliers Association reported that GaN-based RF power amplifiers were used in 60% of 5G base stations deployed in 2023. The U.S. Federal Communications Commission noted a 40% increase in GaN RF device shipments for wireless infrastructure from 2021 to 2023. This growth is driven by GaN's superior performance in high-frequency applications. In March 2024, Qorvo unveiled a new series of GaN-on-SiC RF solutions for 5G mmWave applications. NXP Semiconductors partnered with a leading telecom equipment manufacturer in May 2024 to develop next-generation GaN-based 5G massive MIMO systems.

The automotive industry's shift towards electric and autonomous vehicles is propelling GaN adoption. The U.S. Department of Transportation projected that GaN devices would be used in 30% of electric vehicles by 2025. A report from the European Automobile Manufacturers Association showed a 55% increase in GaN-based power electronics in EVs from 2022 to 2024. This trend is driven by GaN's ability to improve power conversion efficiency and reduce overall system size. In January 2024, ON Semiconductor launched a comprehensive GaN solution for EV onboard chargers and DC-DC converters. Navitas Semiconductor announced in June 2024 a strategic partnership with a major automotive manufacturer to develop GaN-based powertrains for next-generation electric vehicles.

Will Limited Supply Chain of GaN Semiconductor Device Restrain Its Market Growth?

The GaN semiconductor device market is hindered by a less mature supply chain compared to silicon. The availability of GaN materials and components is limited, leading to potential supply constraints and higher costs. This immaturity in the supply chain can result in longer lead times and availability issues, impacting production schedules and scalability.

Integrating GaN devices with existing silicon-based systems can be complex and costly. The significant differences in material properties and performance characteristics necessitate substantial redesign and adaptation efforts. This complexity increases the time and cost for implementation, making it challenging for companies to seamlessly transition to GaN technology.

GaN faces strong competition from Silicon Carbide (SiC), another wide bandgap material. SiC devices are already well-established in high-power applications and offer advantages such as higher thermal conductivity and robustness. This competition can limit the growth potential for GaN devices, especially in markets where SiC has a strong foothold.

GaN devices, despite their superior performance, are relatively new to the market, leading to cautious adoption. Potential users may hesitate without extensive validation and proven reliability, causing market penetration to slow down as industries need time to test and trust GaN devices' performance..

Category-Wise Acumens

Will Rise in Adoption of Power Semiconductors Drive GaN Semiconductor Device Market?

Power semiconductors is emerging as the dominant segment in the GaN semiconductor device market. According to the U.S. Department of Energy, GaN-based power devices accounted for 45% of the total GaN semiconductor market in 2023. The European Power Electronics Association reported a 38% year-over-year growth in GaN power semiconductor adoption from 2021 to 2024. This dominance is driven by the increasing demand for high-efficiency power conversion in various applications. In February 2024, Infineon Technologies announced that its GaN power semiconductor revenue had doubled over the past two years. Texas Instruments introduced a new line of 650V GaN power stages in April 2024, targeting data center and industrial applications.

The electric vehicle (EV) sector is a key driver for GaN power semiconductor dominance. The U.S. Environmental Protection Agency reported that GaN power devices were used in 30% of new EVs sold in 2023, up from 15% in 2021. China's Ministry of Industry and Information Technology noted a 50% increase in GaN power semiconductor usage in EVs from 2022 to 2024. This trend is fueled by GaN's ability to improve power conversion efficiency and reduce overall system size. In March 2024, ON Semiconductor launched a 900V GaN power module specifically designed for EV traction inverters. Navitas Semiconductor partnered with a leading EV manufacturer in May 2024 to develop next-generation GaN-based onboard chargers.

The renewable energy sector is also contributing to the dominance of GaN power semiconductors. The International Energy Agency reported that GaN-based solar inverters achieved a market share of 25% in 2023, up from 10% in 2020. The U.S. National Renewable Energy Laboratory projected that GaN power devices could improve solar inverter efficiency by up to 3% by 2025. This growth is driven by the need for higher efficiency and power density in renewable energy systems. In January 2024, GaN Systems introduced a new series of power transistors optimized for solar and wind power applications. Transphorm announced in June 2024 the successful deployment of its GaN power devices in a large-scale energy storage project, demonstrating improved conversion efficiency and reliability.

Which Factors Contribute to Power Electronics Segment Dominance in GaN Semiconductor Device Market?

Power Electronics have emerged as the dominant application in the GaN Semiconductor Device Market. According to the U.S. Department of Energy, GaN-based power electronics accounted for 55% of the total GaN semiconductor market in 2023. The European Power Electronics Association reported a 42% year-over-year growth in GaN power electronics adoption from 2021 to 2024. This dominance is driven by the increasing demand for high-efficiency power conversion across various industries. In February 2024, Infineon Technologies announced that its GaN power electronics revenue had tripled over the past three years. Texas Instruments introduced a new line of GaN-based power management ICs in April 2024, targeting consumer electronics and industrial applications.

The electric vehicle (EV) sector is a key driver for GaN power electronics dominance. The U.S. Environmental Protection Agency reported that GaN power electronics were used in 40% of new EVs sold in 2023, up from 20% in 2021. China's Ministry of Industry and Information Technology noted a 60% increase in GaN power electronics usage in EVs from 2022 to 2024. This trend is fueled by GaN's ability to improve power conversion efficiency and reduce overall system size in EV powertrains. In March 2024, ON Semiconductor launched a comprehensive GaN power electronics solution for EV traction inverters and onboard chargers. Navitas Semiconductor partnered with a leading EV manufacturer in May 2024 to develop next-generation GaN-based power electronic systems for electric vehicles.

The renewable energy sector is also contributing to the dominance of GaN power electronics. The International Energy Agency reported that GaN-based solar inverters achieved a market share of 30% in 2023, up from 12% in 2020. The U.S. National Renewable Energy Laboratory projected that GaN power electronics could improve overall solar system efficiency by up to 5% by 2025. This growth is driven by the need for higher efficiency and power density in renewable energy systems. In January 2024, GaN Systems introduced a new series of power modules optimized for solar and wind power applications. Transphorm announced in June 2024 the successful deployment of its GaN power electronics in a large-scale grid-tied energy storage project, demonstrating improved conversion efficiency and reliability.

Country/Region-wise Acumens

Will Rising Industrialization Enhance Adoption of GaN Semiconductor Device in Asia Pacific?

The Asia Pacific region has emerged as the dominant player in the GaN semiconductor device market. According to China's Ministry of Industry and Information Technology, the country's GaN device production increased by 45% from 2021 to 2023. Japan's Ministry of Economy, Trade and Industry reported that GaN semiconductor exports grew by 38% between 2020 and 2024. This dominance is driven by strong government support and a robust electronics manufacturing ecosystem. In February 2024, Taiwan Semiconductor Manufacturing Company (TSMC) announced a $2 billion investment to expand its GaN fabrication capacity. South Korea's Samsung Electronics introduced a new line of GaN-based power devices in April 2024, targeting the consumer electronics and automotive markets.

The rapid adoption of 5G technology in Asia Pacific is fueling the demand for GaN RF devices. China's National Bureau of Statistics reported that GaN-based RF power amplifiers were used in 70% of 5G base stations deployed in the country by 2023. The Indian Department of Telecommunications noted a 55% increase in GaN RF device imports for wireless infrastructure from 2022 to 2024. This growth is driven by GaN's superior performance in high-frequency applications. In March 2024, Sumitomo Electric Industries unveiled a new series of GaN-on-SiC RF solutions for 5G mmWave applications. Mitsubishi Electric partnered with a leading Chinese telecom equipment manufacturer in May 2024 to develop next-generation GaN-based 5G massive MIMO systems.

Will Increasing Demand for High-Power and High-Frequency Applications in North America Drive GaN Semiconductor Device Market Growth?

North America's GaN semiconductor device market is experiencing rapid growth, driven by increasing demand for high-power and high-frequency applications. The region's robust technological infrastructure and strong presence of key industry players contribute to its market dominance. The automotive and telecommunications sectors are particularly fuelling this growth, as GaN devices offer superior performance in electric vehicles and 5G networks.

According to the U.S. Department of Energy, GaN-based power electronics could reduce energy losses by up to 50% in various applications. The U.S. government has allocated $17 million for GaN research and development in 2023. Market analysts predict that the North American GaN semiconductor device market will reach $1.2 billion by 2026, with a compound annual growth rate (CAGR) of 22.4% from 2021 to 2026.

Recent developments from key players underscore the market's dynamism. In March 2024, Wolfspeed announced a $6.5 billion investment in a new GaN fabrication facility in North Carolina. Qorvo, another major player, reported a 35% year-over-year increase in GaN-related revenues in their Q2 2024 earnings call. These advancements highlight the region's commitment to maintaining its leadership in GaN semiconductor technology.

Competitive Landscape

The GaN semiconductor device market is a dynamic and competitive space, characterized by a diverse range of players vying for market share. These players are on the run for solidifying their presence through the adoption of strategic plans such as collaborations, mergers, acquisitions, and political support.

The organizations are focusing on innovating their product line to serve the vast population in diverse regions. Some of the prominent players operating in the GaN semiconductor device market include:

• Cree, Inc. (Wolfspeed)
• Infineon Technologies AG
• Qorvo, Inc.
• NXP Semiconductors N.V.
• MACOM Technology Solutions Holdings, Inc.
• Efficient Power Conversion (EPC) Corporation
• Texas Instruments Incorporated
• STMicroelectronics N.V.
• GaN Systems, Inc.
• Analog Devices, Inc.
• Transphorm, Inc.
• Mitsubishi Electric Corporation
• Sumitomo Electric Device Innovations, Inc.
• VisIC Technologies Ltd.
• Navitas Semiconductor Inc.
• Exagan S.A.S.
• Ampleon Netherlands B.V.
• NexGen Power Systems
• Panasonic Corporation
• Microsemi Corporation (Microchip Technology, Inc.)

Latest Developments

• In January 2024, Infineon Technologies announced the launch of its new generation of GaN-based power transistors designed for high-efficiency power conversion in electric vehicles, promising up to 30% reduction in energy loss.
• In March 2024, Cree Inc. introduced a groundbreaking GaN-on-SiC RF amplifier that provides enhanced performance for 5G infrastructure, offering a 50% increase in power density compared to previous models.

TABLE OF CONTENTS

1. Introduction

• Market Definition
• Market Segmentation
• Research Methodology

2. Executive Summary

• Key Findings
• Market Overview
• Market Highlights

3. Market Overview

• Market Size and Growth Potential
• Market Trends
• Market Drivers
• Market Restraints
• Market Opportunities
• Porter's Five Forces Analysis

4. GaN Semiconductor Device Market, By Type

• Power Semiconductors
• Optoelectronic Semiconductors

5. GaN Semiconductor Device Market, By Device Type

• Transistors
• Diodes

6. GaN Semiconductor Device Market, By Application

• Power Electroni cs
• RF Devices
• Automotive

7. Regional Analysis

• North America
• United States
• Canada
• Mexico
• Europe
• United Kingdom
• Germany
• France
• Italy
• Asia-Pacific
• China
• Japan
• India
• Australia
• Latin America
• Brazil
• Argentina
• Chile
• Middle East and Africa
• South Africa
• Saudi Arabia
• UAE

8. Market Dynamics

• Market Drivers
• Market Restraints
• Market Opportunities
• Impact of COVID-19 on the Market

9. Competitive Landscape

• Key Players
• Market Share Analysis

10. Company Profiles

• Wolfspeed, Inc.
• Sumitomo Electric Industries, Ltd.
• Qorvo, Inc.
• MACOM Technology Solutions Holdings, Inc.
• Infineon Technologies AG
• GaN Systems, Inc.
• Efficient Power Conversion Corporation (EPC)
• Toshiba Electronic Devices & Storage Corporation
• NXP Semiconductors
• Texas Instruments Incorporated

11. Market Outlook and Opportunities

• Emerging Technologies
• Future Market Trends
• Investment Opportunities

12. Appendix

• List of Abbreviations
• Sources and References