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3-D TSV：关键问题洞察与市场分析
市场调查报告书
商品编码
1473281

3-D TSV：关键问题洞察与市场分析

3-D TSV: Insight On Critical Issues and Market Analyses
出版日期: | 出版商: Information Network | 英文 | 商品交期: 2-3个工作天内

价格

介绍

在电子设备对更高运算能力和效率不断增长的需求的推动下，半导体产业的 TSV 先进封装领域目前正在快速发展和扩张。以下是一些关键方面和见解：

先进封装的创新： RDL（再分布层）、TSV（硅通孔）、凸块技术和混合键结处于先进封装技术的前沿。两者都透过提高连接效率和降低功耗来提升晶片性能，发挥重要作用。

这些技术解决了传统小型化方法的物理限制，特别是量子隧道技术。由于研发成本高、良率低，进一步小型化并不现实。

对运算能力的影响：先进封装透过增加处理器密度以及进程记忆体连接的频宽和效率来显着提高运算能力。这对于克服 "记忆体墙" 和 "功耗墙" 以及实现人工智慧和机器学习模型等更先进的运算应用至关重要。

需求和供应动态：对先进封装的需求超过了供应，部分原因是人工智慧应用的运算需求爆炸性成长。英伟达和台积电等大公司正努力满足这项需求，产能出现严重瓶颈。

这种供应短缺凸显了扩大先进封装产能以跟上技术进步和市场需求的迫切需求。

市场壁垒和行业趋势：由于製造过程的复杂性和精度要求，先进封装市场的进入障碍很高，有利于拥有全面製造和设计能力的现有公司。

全球领导企业都在扩张产能，但都面临扩张週期长、设备短缺的课题。这种情况为各地区的国内企业加快发展、扩大潜力、扩大市场占有率提供了机会。

未来展望：持续努力扩大产能、积极研发新材料和新技术对于半导体产业未来的成长至关重要。

国内企业，尤其是政府对半导体产业大力支持的地区的企业，拥有独特的机会，可以利用当前的市场动态进行 "国产替代" 并减少对国际供应商的依赖。

关于本报告

本报告全面回顾了半导体封装中 TSV(Through-Silicon Via)开发和部署的核心技术趋势，并着重于 3D 和 2.5D TSV 技术的关键作用。本报告特别详细介绍了采用 3D 和 2.5D TSV 的先进封装解决方案，例如Chip-on-Wafer-on-Substrate (CoWoS) 和 Feveros。

这些先进的封装技术正在突破半导体性能和效率的极限。例如，CoWoS透过垂直堆迭不同类型的晶片实现密集集成，显着提高效能并降低功耗。这对于需要高运算能力的应用领域尤其有利，例如资料中心和人工智慧处理。

本报告深入探讨了这些技术如何应对关键的产业课题，例如更高的频宽、更低的延迟和更低的能耗。我们也强调了这些先进封装技术的战略重要性，以克服传统缩放定律的局限性，并使半导体元件依照摩尔定律持续发展。

此外，我们还分析了市场概况，该概况反映了 HPC（高效能运算）、消费性电子产品和汽车系统应用中对 3D 和 2.5D TSV 解决方案不断增长的需求。本报告重点介绍了竞争格局，并重点介绍了行业领导者为利用这些新商机而采取的技术进步和策略。

目录

第一章简介

第二章 关键问题的见解

  • 3D TSV 驱动因素
  • 使用 TSV 的 3D IC 的优点
  • 对经济高效的 3D 晶片堆迭技术的要求
  • TSV 技术的课题
  • TSV 供应链课题
  • 3D封装技术的局限性
    • 热管理
    • 成本
    • 设计复杂性
    • 交货时间

第三章成本结构

  • 3D晶片堆迭成本结构
  • 拥有成本

第四章 重要加工技术

  • 介绍
  • 镀铜
  • 光刻
    • 光学光刻
    • 压印光刻
    • 抗蚀剂涂层
  • 等离子蚀刻技术
  • 剥离/清洗
  • 薄晶圆键合
  • 晶圆减薄/CMP
  • 堆迭
  • 测量/检查

第五章 重要发展板块评价

  • 介绍
  • 透过优先
    • 设备要求
    • 材料要求
  • 中孔
    • 设备要求
    • 材料要求
  • 最后通孔
    • 设备要求
    • 材料要求
  • 中介层

第六章 入局企业概况

  • 晶片製造商/封装商/服务
  • 设备供应商
  • 材料供应商
  • 研究与开发

第七章市场分析

  • TSV 设备路线图
  • TSV设备预测
  • 设备预测
  • 材料预测

Introduction

The TSV advanced packaging sector of the semiconductor industry is currently undergoing rapid evolution and expansion, driven by the increasing demand for higher computing power and efficiency in electronic devices. Here are some critical insights and implications based on the information provided:

Technological Innovations in Advanced Packaging: Redistribution Layer (RDL), Through-Silicon Via (TSV), Bump Technology, and Hybrid Bonding are at the forefront of advanced packaging technologies. Each plays a crucial role in enhancing chip performance by improving connection efficiency and reducing power consumption.

These technologies address the physical limitations encountered with traditional scaling methods, notably the quantum tunneling effect, which makes further miniaturization impractical due to high R&D costs and low yield rates.

Impact on Computing Power: Advanced packaging significantly boosts computing power by increasing processor integration and enhancing the bandwidth and efficiency of processormemory connections. This is critical for overcoming the "memory wall" and "power consumption wall," enabling more sophisticated computing applications, including AI and machine learning models.

Supply and Demand Dynamics: The demand for advanced packaging is outstripping supply, partly due to the explosive growth in computing requirements for AI applications. Leading companies like Nvidia and TSMC are struggling to meet this demand, indicating a significant bottleneck in production capacity.

This supply shortage highlights the urgency for expanding advanced packaging capabilities to keep pace with technological advancements and market needs.

Market Barriers and Industry Dynamics: The high barriers to entry in the advanced packaging market, due to the complexity and precision required in manufacturing processes, favor established players with comprehensive fabrication and design capabilities.

While leading global companies are expanding their capacities, the lengthy expansion cycle and equipment shortages present challenges. This situation opens opportunities for domestic companies in various regions to accelerate their development and potentially gain market share.

Future Outlook: The ongoing efforts to expand production capabilities and the active R&D in new materials and techniques are essential for the future growth of the semiconductor industry.

Domestic companies, especially in regions with strong government support for the semiconductor industry, have a unique opportunity to leverage the current market dynamics for "domestic substitution" and reduce reliance on international suppliers.

About This Report

This 175-page report covers the following:

The "3-D TSV: Insight On Critical Issues and Market Analysis" report covers a comprehensive examination of technology trends that are central to the development and deployment of Through-Silicon Via (TSV) in semiconductor packaging, focusing on the pivotal role of 3D and 2.5D TSV technologies. A key highlight of the report is the detailed exploration of advanced packaging solutions that incorporate 3D or 2.5D TSV, such as Chip-on-Wafer-on-Substrate (CoWoS) and Feveros.

These advanced packaging technologies are pushing the boundaries of semiconductor performance and efficiency. CoWoS, for instance, enables high-density integration of heterogeneous chips by stacking them vertically, significantly improving performance and reducing power consumption. This is particularly beneficial for applications requiring high computational power, like data centers and AI processing. Feveros, although not detailed in your initial information, can be inferred as another innovative packaging solution leveraging 3D or 2.5D TSV technologies to meet the growing demands for faster, more efficient computing across various sectors.

The report delves into how these technologies address critical industry challenges, including the need for greater bandwidth, reduced latency, and lower energy consumption. It emphasizes the strategic importance of these advanced packaging methods in overcoming the limitations of traditional scaling laws, thus enabling the continued evolution of semiconductor devices in line with Moore's Law.

Moreover, the analysis presents a market overview that reflects the growing demand for 3D and 2.5D TSV solutions, driven by their application in high-performance computing, consumer electronics, and automotive systems. The report underscores the competitive landscape, highlighting the technological advancements and strategies employed by key industry players to capitalize on these emerging opportunities.

Table of Contents

Chapter 1. Introduction

Chapter 2. Insight Into Critical Issues

  • 2.1. Driving Forces In 3-D TSV
  • 2.2. Benefits of 3-D ICs With TSVs
  • 2.3. Requirements For A Cost Effective 3-D Die Stacking Technology
  • 2.4. TSV Technology Challenges
  • 2.5. TSV Supply Chain Challenge
  • 2.6. Limitations of 3-D Packaging Technology
    • 2.6.1. Thermal Management
    • 2.6.2. Cost
    • 2.6.3. Design Complexity
    • 2.6.4. Time to Delivery

Chapter 3. Cost Structure

  • 3.1. Cost Structure of 3-D chip Stacks
  • 3.2. Cost of Ownership

Chapter 4. Critical Processing Technologies

  • 4.1. Introduction
  • 4.2. Cu Plating
  • 4.3. Lithography
    • 4.3.1. Optical Lithography
    • 4.3.2. Imprint Lithography
    • 4.3.3. Resist Coat
  • 4.4. Plasma Etch Technology
  • 4.5. Stripping/Cleaning
  • 4.6. Thin Wafer Bonding
  • 4.7. Wafer Thinning/CMP
  • 4.8. Stacking
  • 4.9. Metrology/Inspection

Chapter 5. Evaluation Of Critical Development Segments

  • 5.1. Introduction
  • 5.2. Via-first
    • 5.2.1. Equipment Requirements
    • 5.2.2. Material Requirements
  • 5.3. Via-Middle
    • 5.3.1. Equipment Requirements
    • 5.3.2. Material Requirements
  • 5.4. Via-Last
    • 5.4.1. Equipment Requirements
    • 5.4.2. Material Requirements
  • 5.5. Interposers

Chapter 6. Profiles Of Participants

  • 6.1. Chip Manufacturers/Packaging Houses/Services
  • 6.2. Equipment Suppliers
  • 6.3. Material Suppliers
  • 6.4. R&D

Chapter 7. Market Analysis

  • 7.1. TSV Device Roadmap
  • 7.2. TSV Device Forecast
  • 7.3. Equipment Forecast
  • 7.4. Material Forecast

List of Tables

  • 1.1. 3-D Mass Memory Volume Comparison Between Other Technologies And TI's 3-D Technology
  • 1.2. 3-D Mass Memory Weight Comparison Between Other Technologies And TI's 3-D Technology
  • 3.1. Cost Of Ownership Comparison
  • 4.1. Via Middle Metrology/Inspection Requirements
  • 4.2. Via Last Metrology/Inspection Requirements
  • 7.1. Forecast Of TSV Devices By Units
  • 7.2. Forecast Of TSV Devices By Wafers
  • 7.3. Forecast Of TSV Equipment by Type

List of Figures

  • 1.1. 3-D Technology On Dram Density
  • 1.2. 3-D Through-Silicon Via (TSV)
  • 1.3. Graphical Illustration Of The Silicon Efficiency Between MCMs And 3-D Technology
  • 1.4. Silicon Efficiency Comparison Between 3D Packaging Technology and Other Conventional Packaging Technologies
  • 2.1. TSV Fabrication Process Challenges
  • 2.2. TSV Fabrication Process Challenge - Cu Protrusion
  • 2.3. TSV Reliability Challenges
  • 2.4. Via Middle Process Integration Challenges
  • 2.5. Via Middle Process Integration Challenges
  • 3.1. Cost Structure of D2W and W2W
  • 3.2. Assembly Cost Analysis
  • 3.2. Cost Structure Of Different Vias And Tools
  • 3.3. Cost Of Ownership For 5 X 50 TSV VIA Middle
  • 3.4. Cost Of CMP For TSV VIA Middle Process
  • 3.5. Cost Of Ownership For 10 X 100 TSV Via Middle
  • 3.6. Cost Structure Of TSVs 5 X 50 micrometerm
  • 3.7. Interposer TSV: Upscaling To 10 X 100 micrometerm
  • 3.8. TSV Downscaling To 3x50 micrometerm
  • 3.9. Cost Structure Of Different Vias And Tools
  • 3.10. Via First Cost Of Ownership
  • 3.11. Via First Cost Of Ownership Front And Back Side
  • 3.12. Via First Process Flow
  • 3.13. iTSV Versus pTSV Cost Of Ownership
  • 3.14. Effect Of TSV Depth And Diameter On Cost
  • 4.1. Illustration Of Bosch Process
  • 4.2. Key Via Middle TSV Process Steps
  • 4.3. Key Last TSC Process Steps
  • 5.1. VIA First, Middle, And Last Process Flows
  • 5,2. VIA First TSV Process Flow
  • 5.3. VIA Middle TSV Process Flow
  • 5.4. Soft Reveal Process
  • 5.5. VIA Last TSV Process Flow
  • 5.6. Comparison Between 2.5D And 3D
  • 5.7. TSV Interposer Cross Sectional Schematic With RDL Layer
  • 5.8. Process Flow For RDL And UBM
  • 7.1. Leading Edge TSV Roadmap
  • 7.2. Forecast Of TSV Devices By Units
  • 7.3. Forecast Of TSV Devices By Wafers
  • 7.4. Forecast Of TSV Equipment by Type
  • 7.5. Forecast Of TSV Materials