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市场调查报告书
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1737073
直通硅晶穿孔(TSV) 技术的全球市场规模:依产品、应用、地区及预测Global Through Silicon Via (TSV) Technology Market Size By Product (Via First TSV, Via Middle TSV), By Application (Image Sensors, 3D Package, 3D Integrated Circuits), By Geographic Scope And Forecast |
2024 年直通硅晶穿孔(TSV) 技术市场规模价值为 351.2 亿美元,预计到 2032 年将达到 1922.9 亿美元,2026 年至 2032 年的复合年增长率为 26.12%。
直通硅晶穿孔(TSV) 技术的应用也呈指数级增长。 TSV 主要用于三维积体电路 (IC) 的製造和 IC 封装,而 IC 封装是智慧电子製造中最关键的组件之一。此外,与传统的覆晶和打线接合相比,TSV 还能提供更高密度的键结、更小的空间和更佳的连接性。 TSV 的效用使其广泛应用于各种电子元件,例如微处理单元 (MPU)、可程式逻辑元件 (PLD)、动态随机存取记忆体 (DRAM)、图形电子晶片、CMOS 影像感测器等等。
定义全球直通硅晶穿孔(TSV) 技术市场
直通硅晶穿孔(TSV) 技术是实现三维 (3D) 硅片与三维积体电路 (IC) 整合的核心与最重要的技术。它能够实现最短的晶片间互连,并具有最小的垫片尺寸和间距。使用直通硅晶穿孔(TSV) 技术进行三维晶片堆迭互连,正成为 CMOS 成像器、记忆体和 MEMS 的先进封装技术。 TSV 技术与传统互连技术相比具有许多优势,包括更低的功耗、更高的电气性能、更高的密度、由于资料频宽更宽而带来的更高频宽以及更轻的重量。
直通硅晶穿孔(TSV) 是指完全贯穿硅片或晶粒晶圆的垂直电气连接。 TSV 是一种用于创建 3D 积体电路和 3D 封装的高性能互连技术,取代了打线接合和覆晶。此技术可显着提高装置和互连密度,并缩短连接长度。直通硅晶穿孔(TSV) 记忆体的市场驱动应用包括:整合逻辑功能和记忆体以提高手持装置的视讯品质;多晶片高效能 DRAM;以及用于固态硬碟的堆迭NAND快闪记忆体快闪记忆体。
直通硅晶穿孔(TSV) 技术的全球市场概览
半导体晶片在电力、医疗、能源、汽车、电动车、电机控制应用以及航太和国防等各行各业的应用日益增多,推动了全球直通硅晶穿孔(TSV) 技术市场的成长。发光二极体)在产品中的日益普及,刺激了更高产量、更低成本和更高密度装置的生产。与二维封装不同,采用 TSV 技术的三维 (3D) 封装可实现更高密度的垂直布线。
此外,由于晶片结构小型化,对电子设备小型化的需求日益增长,这推动了直通硅晶穿孔(TSV) 技术的发展。汽车、通讯、医疗保健和工业生产等各个领域都需要半导体积体电路的小型化。此外,用于 3D 晶片封装的 TSV 技术需求日益增长,以缩短布线长度、降低功率损耗、提高讯号速度并降低功耗,这直通硅晶穿孔(TSV) 技术市场的成长创造了巨大的机会。
然而,供应商必须投入大量资金来设计用于生产小型积体电路的设备。此外,製造过程复杂且耗时。此外,随着半导体积体电路製造製程设计日益复杂,供应商需要增加对封装和组装设备的投入,以提高半导体积体电路的性能,这将对半导体晶片製造商产生一定程度的影响。
相关调查
Through Silicon Via (TSV) Technology Market size was valued at USD 35.12 Billion in 2024 and is projected to reach USD 192.29 Billion by 2032, growing at a CAGR of 26.12% from 2026 to 2032.
The growing adoption of smart electronics products such as smartphones, laptops, tablets, and many others is leading to the exponential growth of Through Silicon Via (TSV) Technology. Since, these TSVs are majorly used in building 3D integrated circuits (ICs), and the IC packages which are one of the most vital components in smart electronics manufacturing. Besides this, the TSVs provide higher-density bonds, require minimal space, and provide the best connectivity compared to conventional flip-chips and wire bonds. The usability of TSVs and various electronic components such as microprocessing units (MPUs), PLDs, DRAMs, electronic chips for graphics and CMOS image sensors, and many others.
Global Through Silicon Via (TSV) Technology Market Definition
Through-silicon via (TSV) technology is the central and most crucial technology enabling the integration of the three-dimensional (3D) Si and 3D integrated circuit (IC). It offers the ability for the shortest chip-to-chip interconnections, and the interconnection of the smallest pad size and pitch. Stacking chips in three dimensional with through-silicon via (TSV) technology as interconnects is an emerging advanced packaging technology for CMOS imagers, memories, and MEMS. TSV technology offers several advantages as compared to traditional interconnection technology, including lower power consumption, better electrical performance, higher density, wider data width and thus bandwidth, and lighter weight.
A through-silicon via (TSV) refers to a vertical electrical connection that passes entirely through a wafer of silicone or dies. TSVs are higher-performance interconnect methods utilized to create 3D integrated circuits and 3D packages as an alternative to wire-bond and flip-chips. In this technique, the device and interconnect density is significantly higher, and the connection length becomes shorter. Market-driven application of through-silicon via (TSV) engaging memory comprises the integration of logic functions and memory for the improved video quality on handheld devices, multi-chip high-performance DRAM, and stacked NAND flash memory for solid-state drives.
Global Through Silicon Via (TSV) Technology Market Overview
The increasing use of semiconductor chips' applications in various industries such as the power, medical, energy, automobiles, electric vehicles, motor control applications, and aerospace and defense is accelerating the growth of the Global Through Silicon Via (TSV) Technology Market. The rising use of light-emitting diodes in products has stimulated the production of higher capacity, lower cost, and higher density devices. Using three-dimensional (3D) packaging in TSV technology, unlike 2D packaging, allows for a higher density of vertical interconnections.
Furthermore, the increasing demand for the miniaturization of the electronic device owing to the compact size chip architecture is driving the development of through silicon via (TSV) technology. Various sectors, such as automotive, telecommunications, healthcare, and industrial manufacturing created the requirement for miniaturized semiconductor ICs. Also, the growing demand for TSV technology for 3D chip packaging to reduce interconnection length, reduce power dissipation, increase signal speed, and reduce power consumption presents a great opportunity for the Through Silicon Via (TSV) Technology Market growth.
However, the market vendors have to capitalize a lot on designing equipment to manufacture compact ICs. In addition to this, the production process is complex and also consumes more time. Also, the designing of the semiconductor ICs manufacturing process is becoming complex, therefore it would have a moderate impact on semiconductor chip manufacturers as they need to invest a great deal in packaging and assembly equipment to improve the performance of semiconductor ICs.
The Global Through Silicon Via (TSV) Technology Market is segmented on the basis of Product, Application, and Geography.
Based on Product, the market is segmented into Via First TSV, Via Middle TSV, and Via Last TSV. The Via Middle TSV segment accounted for the largest market share in 2021. Via-middle TSV approaches typically insert the TSV module after completion of the FEOL phases, which consists of various high-temperature processes but before BEOL processing, where multi-layer metal routing is carried out. Via-middle TSVs are presently a prevalent option for advanced three-dimensional (3D) ICs and also for interposer stacks.
Based on Application, the market is segmented into Image Sensors, 3D Package, 3D Integrated Circuits, and Others. The 3D Integrated Circuits segment accounted for the largest market share in 2021. 3-dimensional integration of integrated circuits (3DIC) using Through Silicon Vias (TSV) is one of the most promising but also challenging technology. Furthermore, increasing penetration of smartphones, feature phones & tablets, and technological advancements in consumer electronic devices are major factors driving the growth of the global 3D integrated circuit with the Through Silicon Via (TSV) Technology Market.
The "Global Through Silicon Via (TSV) Technology Market" study report will provide valuable insight with an emphasis on the global market. The major players in the market are AMS, Hua Tian Technology, Samsung, Amkor Micralyne, Inc., Intel Corporation, TESCAN, Dow Inc., WLCSP, ALLVIA, Applied Materials, International Business Machines Corporation, Tezzaron Semiconductors, STATS ChipPAC Ltd, Xilinx, Renesas Electronics Corporation, Texas Instruments. Besides this, much new entrance and Through Silicon Via manufacturers from the respective economies are forming supply agreements with the Smart Electronics manufacturing companies to attain a competitive edge in the market.
Our market analysis also entails a section solely dedicated to such major players wherein our analysts provide an insight into the financial statements of all the major players, along with its product benchmarking and SWOT analysis. The competitive landscape section also includes key development strategies, market share, and market ranking analysis of the above-mentioned players globally.
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