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市场调查报告书
商品编码
1852082

功率半导体：市场占有率分析、产业趋势、统计数据和成长预测（2025-2030 年）

Power Semiconductor - Market Share Analysis, Industry Trends & Statistics, Growth Forecasts (2025 - 2030)
出版日期: | 出版商: Mordor Intelligence | 英文 120 Pages | 商品交期: 2-3个工作天内

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简介目录

预计到 2025 年，功率半导体市场规模将达到 568.7 亿美元，到 2030 年将达到 743.6 亿美元，年复合成长率为 5.51%。

功率半导体市场-IMG1

儘管其他领域週期性放缓，但对高效功率转换的强劲需求，包括电动车、可再生能源系统和数据密集型电子产品，使功率半导体市场保持了韧性。宽能带隙（WBG）材料，主要是碳化硅（SiC）和氮化镓（GaN），由于其在高电压和高频率下性能优于硅，因此价格也更高。汽车电气化支撑了产量成长，而太阳能+储能设施的安装、5G基础设施的部署以及工厂自动化升级才是推动快速成长的主要动力。区域供应链政策，例如美国的《晶片和工业产品法案》（CHIPS Act）和欧洲的《晶片和工业产品法案》，正在推动对国内製造业的投资，而亚太地区则凭藉其端到端的製造规模优势，保持着领先地位。

全球功率半导体市场趋势与洞察

电动车和充电基础设施的需求激增

电动车越来越依赖碳化硅（SiC）MOSFET，这种元件能够提高动力传动系统的效率并缩短充电时间。汽车製造商在过渡到800V系统时，会指定使用SiC来降低逆变器损耗，例如FORVIA HELLA为其下一代车载充电器选择了1200V CoolSiC装置。像安森美半导体与大众汽车签订的多年供货协议，确保了从晶片到模组的垂直整合交付，并降低了分配风险。并联直流快速充电器的部署需要8kW至1MW的功率模组，光是汽车应用就使SiC的需求量翻了一番。由于车规级产量比率仍面临挑战，整合元件製造商（IDM）正在增加专属式基板能，以稳定成本曲线并保护利润率。

5G基地台部署

在低于 6 GHz 和毫米波频段，GaN高电子移动性电晶体的增益和效率均高于 LDMOS。由于小型基地台尺寸缩小，到本世纪末 GaN 的出货量将增加四倍。恩智浦半导体 (NXP) 将 Si LDMOS 和 GaN晶粒整合到多晶片大规模 MIMO 模组中，以整合天线阵列并简化散热设计。此外，该公司还提供了一种烧结晶粒黏接材料，适用于能够承受超过 225°C 热点温度的功率半导体。电讯业注重整体拥有成本，将效率提升转化为营运成本的节省，从而巩固 GaN 在未来部署中的应用。

硅片供应週期

目前晶圆总需求超过合格能，记忆体供应商的库存削减正在扭曲近期的采购行为。地缘政治摩擦推高了晶圆厂的建造成本，而水资源限制措施则限制了干旱地区的待开发区位置。中国参与企业正竞相进行价格战，挤压了整个产业链的利润空间。儘管前端产能预订显示市场正在復苏，但个人电脑和智慧型手机终端市场的疲软限制了销售的恢復，暴露出的结构性而非週期性失衡问题。

细分市场分析

到2025年，功率积体电路将成为功率半导体市场规模的重要组成部分，预计到2030年将以6.12%的复合年增长率成长。汽车电池管理单元需要多轨稳压器和功能安全诊断功能，而这些功能都整合在紧凑的电源管理积体电路（PMIC）封装中。英飞凌符合ISO 26262标准的OPTIREG TLF35585为安全相关的电控系统供电，这标誌着单晶片电源管理的发展趋势。分立元件在高电流路径中仍然至关重要，占据45%的市场。然而，在空间受限的子系统中，由于设计人员更倾向于成本优化的模组或积体电路解决方案，分立元件的市场份额正在下降。

供应商的蓝图正在将GaN或SiC晶粒整合到智慧功率模组中，这些模组整合了闸极驱动、感测和保护功能，从而加快了逆变器和充电器组件的上市速度。模组整合使缺乏内部封装技术的中型批量工业和住宅能源客户受益。另一方面，家用电子电器ODM厂商正在为其适配器设计采购分离式MOSFET，以利用基板级弹性和价格优势。分离式、模组和积体电路形式的共存丰富了功率半导体市场，实现了性能和成本之间的客製化权衡。

区域分析

亚太地区将在2024年占据51.7%的功率半导体市场份额，并在2030年之前维持6.86%的复合年增长率。中国在国家补贴和垂直整合的供应链的推动下，正引领碳化硅（SiC）和氮化镓（GaN）产能的扩张。印度正在加速建造一座投资760亿卢比的OSAT园区，目标日产量为1,500万颗，显示其有意在国内进行组装。台湾和韩国将分别在先进封装和记忆体领域主导，而日本将加强其在上游材料方面的控制。

北美将受益于《晶片製造和创新法案》（CHIPS Act）提供的500亿美元激励措施，这将推动棕地斯皮德（Wolfspeed）、博世（Bosch）等国际参与企业进行现有工厂改造和待开发区项目。汽车、国防和资料中心丛集将集中需求，并推动在地化生产的要求。 SEMI预测，2027年，区域工厂资本支出将翻倍，达到247亿美元，强调长期规模发展。

欧洲将利用其汽车和可再生能源政策的协调一致，推动碳化硅（SiC）和氮化镓（GaN）技术的应用。德国核准在德勒斯登建造价值50亿欧元的工厂，便是公私合作提高能源自给率的范例。法国和义大利正在提供额外的津贴方案，以维持其在组件和基板的尖端技术。中东、非洲和拉丁美洲等新兴市场则更注重价值，并采用成熟的硅平台，同时逐步试验宽禁带（WBG）技术，用于太阳能发电和铁路电气化。

其他福利：

  • Excel格式的市场预测（ME）表
  • 3个月的分析师支持

目录

第一章 引言

  • 研究假设和市场定义
  • 调查范围

第二章调查方法

第三章执行摘要

第四章 市场情势

  • 市场概览
  • 市场驱动因素
    • 电动车和充电基础设施的需求正在快速成长
    • 5G基地台的分布
    • 可再生能源推动电力转换成长
    • 工业自动化和电机驱动升级
    • 高空平台系统与全电动式飞机动力传动系统
    • 面向亚洲的快速充电两轮/三轮电动车架构
  • 市场限制
    • 硅片供应週期
    • WBG设备高成本且设计复杂
    • 高密度电动车逆变器的热极限
    • 氮化镓外延设备的出口限制
  • 价值/供应链分析
  • 监管环境
  • 技术展望
  • 波特五力分析
    • 供应商的议价能力
    • 买方的议价能力
    • 新进入者的威胁
    • 竞争对手之间的竞争
    • 替代品的威胁
  • 投资分析

第五章 市场规模与成长预测

  • 按组件
    • 离散的
      • 整流器
      • 双极
      • MOSFET
      • IGBT
      • 其他分立元件（闸流体、HEMT 等）
    • 模组
      • 闸流体模组
      • IGBT模组
      • MOSFET模组
      • 智慧型电源模组（IPM）
    • 功率积体电路
      • PMIC（多通道）
      • 开关稳压器（AC/DC、DC/DC、ISO/非ISO）
      • 线性稳压器
      • 电池管理积体电路
      • 其他电源积体电路
  • 材料
    • 硅
    • 碳化硅（SiC）
    • 氮化镓（GaN）
    • 其他的
  • 按最终用户行业划分
    • 车
    • 消费性电子产品和家用电器
    • 资讯通信技术（资讯科技和电信）
    • 工业和製造业
    • 能源与电力（可再生能源、电网）
    • 航太/国防
    • 医疗设备
    • 其他（铁路、船）
  • 按地区
    • 北美洲
      • 美国
      • 加拿大
      • 墨西哥
    • 欧洲
      • 德国
      • 法国
      • 英国
      • 义大利
      • 其他欧洲地区
    • 亚太地区
      • 中国
      • 日本
      • 韩国
      • 印度
      • 亚太其他地区
    • 南美洲
      • 巴西
      • 阿根廷
      • 其他南美洲国家
    • 中东
      • 以色列
      • 沙乌地阿拉伯
      • 阿拉伯聯合大公国
      • 其他中东地区
    • 非洲
      • 南非
      • 埃及
      • 其他非洲地区

第六章 竞争情势

  • 市场集中度
  • 策略趋势
  • 市占率分析
  • 公司简介
    • Infineon Technologies AG
    • Texas Instruments Incorporated
    • Qorvo Inc.
    • STMicroelectronics NV
    • NXP Semiconductors NV
    • ON Semiconductor Corporation
    • Renesas Electronics Corporation
    • Broadcom Inc.
    • Toshiba Corporation
    • Mitsubishi Electric Corporation
    • Fuji Electric Co., Ltd.
    • Semikron Danfoss GmbH and Co. KG
    • Wolfspeed Inc.
    • ROHM Co., Ltd.
    • Vishay Intertechnology Inc.
    • Nexperia BV
    • Alpha and Omega Semiconductor Ltd.
    • Magnachip Semiconductor Corp.
    • Microchip Technology Inc.
    • Littelfuse Inc.
    • Navitas Semiconductor Corp.
    • Power Integrations Inc.
    • Monolithic Power Systems Inc.

第七章 市场机会与未来展望

简介目录
Product Code: 63819

The power semiconductor market size stands at USD 56.87 billion in 2025 and is on track to reach USD 74.36 billion by 2030, advancing at a 5.51% CAGR .

Power Semiconductor - Market - IMG1

Strong demand for efficient power conversion across electric vehicles, renewable energy systems, and data-intensive electronics keeps the power semiconductor market resilient even as cyclical slowdowns emerge elsewhere. Wide-bandgap (WBG) materials-chiefly silicon carbide (SiC) and gallium nitride (GaN)-command premium pricing because they outperform silicon in high-voltage and high-frequency conditions. Automotive electrification anchors volume, yet rapid growth stems from solar-plus-storage installations, 5G infrastructure rollouts, and factory automation upgrades. Regional supply-chain policies such as the U.S. CHIPS Act and the European Chips Act intensify domestic fabrication investments, while the Asia Pacific leverages its end-to-end manufacturing scale to maintain leadership.

Global Power Semiconductor Market Trends and Insights

Surging Demand for EVs and Charging Infrastructure

Electric vehicles increasingly rely on SiC MOSFETs that raise drivetrain efficiency and shorten charging times . Automakers shifting to 800 V systems specify SiC to trim inverter losses, evidenced by FORVIA HELLA selecting 1,200 V CoolSiC devices for next-gen on-board chargers. Multi-year supply pacts, such as onsemi's agreement with Volkswagen, secure vertically integrated chip-to-module deliveries, mitigating allocation risks. Parallel DC fast-charger roll-outs require 8 kW to 1 MW power blocks, effectively doubling SiC demand from vehicle content alone. Automotive-grade yields stay challenging, so IDMs add captive substrate capacity to stabilize cost curves and safeguard margins.

Proliferation of 5G Base-Stations

GaN high-electron-mobility transistors deliver higher gain and efficiency than LDMOS at sub-6 GHz and mmWave frequencies. Small-cell densification pushes GaN shipments to quadruple by decade-end as operators combat escalating energy bills. NXP couples Si LDMOS with GaN die in multichip massive-MIMO modules that integrate antenna arrays and simplify thermal design. Power semiconductor suppliers add sintered die-attach materials to cope with hot-spot temperatures above 225 °C. The telecom sector's focus on total-cost-of-ownership converts incremental efficiency gains into reduced opex, cementing GaN adoption in next-phase rollouts.

Silicon Wafer Supply Tightness Cycles

Total wafer demand now eclipses qualified capacity, and inventory drawdown at memory suppliers distorts short-term purchasing behavior . Geopolitical friction inflates fab-construction costs, while water-usage limits restrict greenfield sites in drought-prone zones. Chinese entrants pursue price competition that compresses margins across the chain. Although front-end equipment bookings hint at recovery, end-market weakness in PCs and smartphones tempers volume pick-up, exposing structural rather than cyclical imbalances.

Other drivers and restraints analyzed in the detailed report include:

  1. Renewables-Led Power Conversion Growth
  2. Industrial Automation and Motor-Drive Upgrades
  3. High Cost / Design Complexity of WBG Devices

For complete list of drivers and restraints, kindly check the Table Of Contents.

Segment Analysis

Power integrated circuits contributed significantly to the power semiconductor market size in 2025 and will climb at a 6.12% CAGR through 2030. Automotive battery-management units require multi-rail regulators and functional-safety diagnostics delivered in a compact PMIC footprint. Infineon's ISO 26262-compliant OPTIREG TLF35585 underpins safety-related electronic control units, illustrating the trend toward single-chip power management . Discrete devices remain indispensable for high-current paths, preserving 45% revenue share; nevertheless, the discrete share edges lower as designers favor cost-optimized module or IC solutions in space-constrained subsystems.

Supplier roadmaps bundle GaN or SiC dies within intelligent power modules that integrate gate drive, sensing, and protection, shortening time-to-market for inverter and charger assemblies. Module consolidation benefits mid-volume industrial and residential energy customers who lack in-house packaging expertise. Conversely, consumer-electronics ODMs still procure discrete MOSFETs for adapter designs to exploit board-level flexibility and price advantages. The coexistence of discrete, module, and IC formats enriches the power semiconductor market, enabling tailored performance-cost trade-offs.

The Power Semiconductor Market Report is Segmented by Component (Discrete, Modules, Power IC), Material (Silicon, Silicon Carbide, Gallium Nitride, Others), End-User Industry (Automotive, Consumer Electronics and Appliances, ICT, Industrial and Manufacturing, Energy and Power, Aerospace and Defense, Healthcare and Equipment, Others), and Geography. The Market Forecasts are Provided in Terms of Value (USD).

Geography Analysis

Asia Pacific accounted for 51.7% of the power semiconductor market share in 2024 and sustained a 6.86% CAGR through 2030. China spearheads SiC and GaN capacity ramps, aided by state subsidies and vertically integrated supply chains. India fast-tracks an INR 7,600 crore OSAT campus targeting 15 million units per day, signaling intent to onshore assembly. Taiwan and South Korea guard leadership in advanced packaging and memory, respectively, while Japan fortifies upstream materials command.

North America benefits from USD 50 billion in CHIPS Act incentives that unlock brownfield conversions and greenfield fabs by Wolfspeed, Bosch, and overseas entrants. Automotive, defense, and data-center clusters concentrate demand, boosting local content requirements. SEMI projects regional fab-equipment outlays doubling to USD 24.7 billion by 2027, underscoring long-term scale-up .

Europe leverages its automotive and renewable energy policy alignment to catalyze SiC and GaN uptake. Germany's EUR 5 billion Dresden fab approval exemplifies public-private alignment to elevate self-sufficiency. France and Italy offer additional grant packages to preserve leading-edge module and substrate know-how. Emerging markets across the Middle East, Africa, and Latin America stay value-conscious, adopting mature silicon platforms while gradually trialing WBG for utility-scale solar and railway electrification.

  1. Infineon Technologies AG
  2. Texas Instruments Incorporated
  3. Qorvo Inc.
  4. STMicroelectronics N.V.
  5. NXP Semiconductors N.V.
  6. ON Semiconductor Corporation
  7. Renesas Electronics Corporation
  8. Broadcom Inc.
  9. Toshiba Corporation
  10. Mitsubishi Electric Corporation
  11. Fuji Electric Co., Ltd.
  12. Semikron Danfoss GmbH and Co. KG
  13. Wolfspeed Inc.
  14. ROHM Co., Ltd.
  15. Vishay Intertechnology Inc.
  16. Nexperia B.V.
  17. Alpha and Omega Semiconductor Ltd.
  18. Magnachip Semiconductor Corp.
  19. Microchip Technology Inc.
  20. Littelfuse Inc.
  21. Navitas Semiconductor Corp.
  22. Power Integrations Inc.
  23. Monolithic Power Systems Inc.

Additional Benefits:

  • The market estimate (ME) sheet in Excel format
  • 3 months of analyst support

TABLE OF CONTENTS

1 INTRODUCTION

  • 1.1 Study Assumptions and Market Definition
  • 1.2 Scope of the Study

2 RESEARCH METHODOLOGY

3 EXECUTIVE SUMMARY

4 MARKET LANDSCAPE

  • 4.1 Market Overview
  • 4.2 Market Drivers
    • 4.2.1 Surging demand for EVs and charging infrastructure
    • 4.2.2 Proliferation of 5G base-stations
    • 4.2.3 Renewables-led power conversion growth
    • 4.2.4 Industrial automation and motor-drive upgrades
    • 4.2.5 HAPS and all-electric aircraft powertrains
    • 4.2.6 Fast-charging 2-/3-wheeler EV architectures in Asia
  • 4.3 Market Restraints
    • 4.3.1 Silicon wafer supply tightness cycles
    • 4.3.2 High cost / design complexity of WBG devices
    • 4.3.3 Thermal limits in high-density EV inverters
    • 4.3.4 Export controls on GaN epitaxy tools
  • 4.4 Value / Supply-Chain Analysis
  • 4.5 Regulatory Landscape
  • 4.6 Technological Outlook
  • 4.7 Porters Five Forces Analysis
    • 4.7.1 Bargaining Power of Suppliers
    • 4.7.2 Bargaining Power of Buyers
    • 4.7.3 Threat of New Entrants
    • 4.7.4 Intensity of Competitive Rivalry
    • 4.7.5 Threat of Substitutes
  • 4.8 Investment Analysis

5 MARKET SIZE AND GROWTH FORECASTS (VALUE)

  • 5.1 By Component
    • 5.1.1 Discrete
      • 5.1.1.1 Rectifier
      • 5.1.1.2 Bipolar
      • 5.1.1.3 MOSFET
      • 5.1.1.4 IGBT
      • 5.1.1.5 Other Discrete Components (Thyristor, HEMT, etc.)
    • 5.1.2 Modules
      • 5.1.2.1 Thyristor Module
      • 5.1.2.2 IGBT Module
      • 5.1.2.3 MOSFET Module
      • 5.1.2.4 Intelligent Power Module (IPM)
    • 5.1.3 Power IC
      • 5.1.3.1 PMIC (Multichannel)
      • 5.1.3.2 Switching Regulators (AC/DC, DC/DC, Iso/Non-iso)
      • 5.1.3.3 Linear Regulators
      • 5.1.3.4 Battery Management IC
      • 5.1.3.5 Other Power ICs
  • 5.2 By Material
    • 5.2.1 Silicon
    • 5.2.2 Silicon Carbide (SiC)
    • 5.2.3 Gallium Nitride (GaN)
    • 5.2.4 Others
  • 5.3 By End-user Industry
    • 5.3.1 Automotive
    • 5.3.2 Consumer Electronics and Appliances
    • 5.3.3 ICT (IT and Telecom)
    • 5.3.4 Industrial and Manufacturing
    • 5.3.5 Energy and Power (Renewables, Grid)
    • 5.3.6 Aerospace and Defense
    • 5.3.7 Healthcare Equipment
    • 5.3.8 Others (Rail, Marine)
  • 5.4 By Geography
    • 5.4.1 North America
      • 5.4.1.1 United States
      • 5.4.1.2 Canada
      • 5.4.1.3 Mexico
    • 5.4.2 Europe
      • 5.4.2.1 Germany
      • 5.4.2.2 France
      • 5.4.2.3 United Kingdom
      • 5.4.2.4 Italy
      • 5.4.2.5 Rest of Europe
    • 5.4.3 Asia Pacific
      • 5.4.3.1 China
      • 5.4.3.2 Japan
      • 5.4.3.3 South Korea
      • 5.4.3.4 India
      • 5.4.3.5 Rest of Asia Pacific
    • 5.4.4 South America
      • 5.4.4.1 Brazil
      • 5.4.4.2 Argentina
      • 5.4.4.3 Rest of South America
    • 5.4.5 Middle East
      • 5.4.5.1 Israel
      • 5.4.5.2 Saudi Arabia
      • 5.4.5.3 United Arab Emirates
      • 5.4.5.4 Rest of Middle East
    • 5.4.6 Africa
      • 5.4.6.1 South Africa
      • 5.4.6.2 Egypt
      • 5.4.6.3 Rest of Africa

6 COMPETITIVE LANDSCAPE

  • 6.1 Market Concentration
  • 6.2 Strategic Moves
  • 6.3 Market Share Analysis
  • 6.4 Company Profiles (includes Global level Overview, Market level overview, Core Segments, Financials as available, Strategic Information, Market Rank/Share for key companies, Products and Services, and Recent Developments))
    • 6.4.1 Infineon Technologies AG
    • 6.4.2 Texas Instruments Incorporated
    • 6.4.3 Qorvo Inc.
    • 6.4.4 STMicroelectronics N.V.
    • 6.4.5 NXP Semiconductors N.V.
    • 6.4.6 ON Semiconductor Corporation
    • 6.4.7 Renesas Electronics Corporation
    • 6.4.8 Broadcom Inc.
    • 6.4.9 Toshiba Corporation
    • 6.4.10 Mitsubishi Electric Corporation
    • 6.4.11 Fuji Electric Co., Ltd.
    • 6.4.12 Semikron Danfoss GmbH and Co. KG
    • 6.4.13 Wolfspeed Inc.
    • 6.4.14 ROHM Co., Ltd.
    • 6.4.15 Vishay Intertechnology Inc.
    • 6.4.16 Nexperia B.V.
    • 6.4.17 Alpha and Omega Semiconductor Ltd.
    • 6.4.18 Magnachip Semiconductor Corp.
    • 6.4.19 Microchip Technology Inc.
    • 6.4.20 Littelfuse Inc.
    • 6.4.21 Navitas Semiconductor Corp.
    • 6.4.22 Power Integrations Inc.
    • 6.4.23 Monolithic Power Systems Inc.

7 MARKET OPPORTUNITIES AND FUTURE OUTLOOK

  • 7.1 White-space and Unmet-Need Assessment