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市场调查报告书
商品编码
1689968

高频宽记忆体：市场占有率分析、产业趋势与统计资料、成长预测（2025-2030 年）

High Bandwidth Memory - Market Share Analysis, Industry Trends & Statistics, Growth Forecasts (2025 - 2030)
出版日期: | 出版商: Mordor Intelligence | 英文 120 Pages | 商品交期: 2-3个工作天内

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简介目录

高频宽记忆体市场规模预计在 2025 年为 31.7 亿美元，预计到 2030 年将达到 100.2 亿美元，预测期内（2025-2030 年）的复合年增长率为 25.86%。

高频宽记忆体市场-IMG1

高频宽记忆体（HBM）是一种用于 3D 堆迭 SDRAM 的高速电脑记忆体接口，通常用于高效能图形加速器、网路设备和超级电脑。

推动高频宽记忆体 (HBM) 市场成长的关键因素是对高频宽、低功耗和高度可扩展记忆体的需求不断增长、人工智慧的采用日益增加以及电子设备小型化的趋势日益增强。

透过在电路板上堆迭八个 DRAM晶粒并将它们与 TSV 互连，HBM 可提供更高的频宽，同时在相对较小的尺寸内消耗更少的功耗。 HBM 具有 128 个通道，总合8 个通道，描述了 1,024 位元介面。具有四个 HBM 堆迭的 GPU 将提供 4,096 位元记忆体汇流排。

例如，2024年6月，美国记忆体晶片製造商美光科技在美国建造了一条先进高频宽记忆体晶片测试生产线。该公司正考虑首次在马来西亚生产 HBM，以满足 AI 热潮带来的进一步需求。

随着图形应用程式的增加，对更快资讯传递（频宽）的需求也随之增加。因此，HBM 在性能和功率效率方面优于前代 GDDR5，为高频宽记忆体市场创造了成长机会。

此外，由于新冠疫情，主要半导体供应商的产能都在下降。此外，由于劳动力短缺，中国许多封装测试厂已经缩减甚至停止营运。这给依赖此类后端封装和测试产能的晶片公司造成了瓶颈。

然而，推动市场成长的因素包括人工智慧的日益普及、对低功耗、高频宽和高度可扩展记忆体的需求不断增长，以及电子设备小型化的趋势日益增强。

高频宽记忆体市场趋势

汽车和其他应用领域预计将强劲成长

  • 随着自动驾驶汽车和 ADAS 整合的兴起，高频宽记忆体应用在汽车产业正在不断扩大。汽车行业的进步推动了高性能记忆体的采用，支持了 HBM 市场的成长。
  • HBM 透过使用 2.5D 技术来改善传统 DRAM 而不断发展，使其更接近 CPU，同时降低驱动讯号所需的功率并最大限度地减少 RC 延迟。自动驾驶市场正在扩大，并广泛使用资料集来解释和分析环境。资料处理正在快速进行，以防止故障和即将发生的灾难。对于更快、更强大的 GPU 的需求正在推动对系统中高频宽记忆体的需求。
  • 2024 年 3 月，记忆体晶片製造商三星电子在其记忆体晶片部门内成立了高频宽记忆体 (HBM) 团队，以便在开发第六代 AI 记忆体 HBM4 和 AI 加速器 Mach-1 时提高生产产量比率。新团队将负责DRAM和NAND快闪记忆体快闪记忆体的研发和销售。
  • 先进的驾驶辅助技术以及自动驾驶在汽车行业中正变得相当普遍。先前的 ADAS 设计使用了 DDR4 和 LPDDR4 等记忆体晶片。然而，随着汽车产业从成本效益转向更好的性能参数，ADAS 製造商正在将 HBM 技术纳入其设计架构中。
  • 汽车技术的快速进步和汽车前沿技术的日益广泛使用预计将推动研究市场中高频宽记忆体和 DDRAM 的销售。

北美占最大市场份额

  • 北美广泛采用 HBM 主要是因为高效能运算 (HPC) 应用的成长，这些应用需要高频宽记忆体解决方案来快速处理资料。由于对人工智慧、机器学习和云端运算的需求不断增长，北美对 HPC 的需求也在增长。
  • 科技的快速变化和各行各业产生的大量资料使得人们需要高效的处理系统。这些也是推动该地区高频宽记忆体市场需求的一些因素。
  • 此外，美国政府还启动了资料中心优化倡议（DCOI），以整合该国的许多资料中心，从而更好地为公民服务，同时提高纳税人的投资报酬率。这个整合过程包括建立超大规模资料中心并关闭表现不佳的资料。根据Cloudscene预测，截至2024年3月，美国将拥有约5,381个资料中心。
  • 北美记忆体製造商正在寻找机会扩大其产品范围。例如，英特尔宣布推出其新一代具有高频宽记忆体 (HBM) 的 Sapphire Rapids (SPR) Xeon 可扩充处理器。 Sapphire Rapids 支援 DDR5，预计将支援高频宽记忆体（HBM），取代目前伺服器记忆体的趋势 DDR4，并有可能显着增加 CPU 可用的记忆频宽。

高频宽记忆体产业概况

高频宽记忆体市场高度分散。市场竞争非常激烈，有几家大型企业参与竞争。该行业竞争对手之间的竞争主要基于透过技术创新、市场渗透和竞争策略获得可持续的竞争优势。这是一个资本密集型市场，因此退出门槛很高。市场的主要企业包括英特尔公司、东芝公司和富士通有限公司。

  • 2024 年 4 月－台积电与 SK 海力士签署谅解备忘录，开发下一代 HBM（高频宽记忆体）和下一代封装技术。 SK海力士打算利用台积电先进的逻辑製程来製造HBM4的底层组件，预计这将提升记忆体晶片的性能和能源效率，旨在在有限的空间内容纳更多功能。
  • 2024 年 3 月 - Camtek Ltd. 宣布已从一家领先的高频宽记忆体 (HBM) 製造商赢得价值约 2500 万美元的新订单，用于测试和测量 HBM。大多数系统计划于 2024 年底交付。

其他福利

  • Excel 格式的市场预测 (ME) 表
  • 3个月的分析师支持

目录

第一章 引言

  • 研究假设和市场定义
  • 研究范围

第二章调查方法

第三章执行摘要

第四章 市场洞察

  • 市场概览
  • 产业价值链分析
  • 产业吸引力-波特五力分析
    • 供应商的议价能力
    • 买家/消费者的议价能力
    • 新进入者的威胁
    • 替代品的威胁
    • 竞争对手之间的竞争强度
  • COVID-19 市场影响评估
  • 市场驱动因素
    • 对高频宽、低功耗和高度可扩展记忆体的需求日益增长
    • 人工智慧的采用率不断提高
    • 电子设备小型化趋势日益增强
  • 市场问题
    • HBM 相关的高成本与设计复杂性
  • DRAM市场
    • DRAM收益与需求预测（2023-2028）
    • DRAM收益按地区划分（与 HBM 市场位于同一地区）
    • DDR5 RAM 产品的当前价格
    • DDR5 产品製造商列表

第五章市场区隔

  • 按应用
    • 伺服器
    • 联网
    • 消费者
    • 汽车和其他应用
  • 按地区
    • 北美洲
      • 美国
      • 加拿大
    • 欧洲
      • 德国
      • 法国
      • 英国
      • 其他欧洲国家
    • 亚太地区
      • 印度
      • 中国
      • 日本
      • 其他亚太地区
    • 其他的

第六章竞争格局

  • 公司简介
    • 主要HBM内存晶粒供应商
      • Micron Technology Inc.
      • Samsung Electronics Co. Ltd
      • SK Hynix Inc.
    • 主要相关利益者概况
      • Intel Corporation
      • Fujitsu Limited
      • Advanced Micro Devices Inc.
      • Xilinx Inc.
      • Nvidia Corporation
      • Open Silicon Inc.

第七章投资分析

第八章 市场机会与未来趋势

简介目录
Product Code: 69589

The High Bandwidth Memory Market size is estimated at USD 3.17 billion in 2025, and is expected to reach USD 10.02 billion by 2030, at a CAGR of 25.86% during the forecast period (2025-2030).

High Bandwidth Memory - Market - IMG1

High bandwidth memory (HBM) is a high-speed computer memory interface for 3D-stacked SDRAM, usually used with high-performance graphics accelerators, network devices, and supercomputers.

Major factors driving the growth of the high bandwidth memory (HBM) market include the growing need for high bandwidth, low power, and highly scalable memories, increasing adoption of artificial intelligence, and a rising trend of miniaturization of electronic devices.

By stacking up 8 DRAM dies on the circuit and interconnecting them with TSVs, HBM offers a substantially higher bandwidth while using less power in a relatively minor form factor. Also, with 128-bit channels and a total of 8 channels, the HBM offers a 1,024-bit interface. A GPU with four HBM stacks would provide a memory bus with 4,096 bits.

For instance, in June 2024, US memory chip maker Micron Technology built test production lines for advanced high bandwidth memory chips in the United States. The company is considering manufacturing HBM in Malaysia for the first time to capture more demand from the AI boom.

With the growing graphics application, the appetite for fast information delivery (bandwidth) has also increased. Therefore, HBM performs better than GDDR5, which was used earlier in terms of performance and power efficiency, resulting in growth opportunities for the high bandwidth memory market.

Moreover, the major semiconductor vendors worked with reduced capacity due to the COVID-19 pandemic. Additionally, due to the shortage of laborers, many packages and testing plants in China reduced or even stopped operations. This created a bottleneck for chip companies that rely on such back-end packages and testing capacity.

However, some factors driving the market's growth include the increasing adoption of artificial intelligence, increasing demand for low power consumption, high bandwidth, highly scalable memories, and a rising trend of miniaturization of electronic devices.

High Bandwidth Memory Market Trends

The Automotive and Other Applications Segment is Expected to Grow Significantly

  • The applications of high bandwidth memory are spanning the automotive industry due to the rise of self-driving cars and ADAS integration. Advancements in the automotive industry have driven the adoption of high-performance memory, which supports the growth of the HBM market.
  • HBM has evolved by improving upon conventional DRAM using 2.5D technology, bringing it closer to the CPU while requiring less power to drive a signal and minimizing RC latency. The autonomous driving market is expanding, extensively using data sets to interpret and analyze the environment. In order to prevent mishaps and impending catastrophes, data processing is carried out at a very rapid pace. The demand for quick and potent GPUs has increased the demand for high bandwidth memory to be included in the systems.
  • In March 2024, Samsung Electronics Co., a memory chipmaker, set up a high bandwidth memory (HBM) team within the memory chip division to raise production yields as it is developing a sixth-generation AI memory HBM4 and AI accelerator Mach-1. The new team is in charge of the development and sales of DRAM and NAND flash memory.
  • Advanced driver-assistance technologies have become quite popular in the car industry alongside autonomous driving. Earlier ADAS designs used memory chips like DDR4 and LPDDR4 since they were readily available at the time. However, the automobile industry's transition from cost-effectiveness to better performance parameters pushes ADAS makers to incorporate HBM technology into their design architecture.
  • The rapid advancement of technology in automobiles and increasing usage of edge technologies in cars are expected to boost the sales of high bandwidth memory and DDRAM in the market studied.

North America to Hold the Largest Share in the Market

  • The high adoption of HBMs in North America is primarily due to the growth in high-performance computing (HPC) applications that require high bandwidth memory solutions for fast data processing. HPC demand in North America is growing due to the increase in demand for AI, machine learning, and cloud computing.
  • The rapidly changing technologies and high data generation across industries create a need for efficient processing systems. These are also some of the factors driving the demand for the high bandwidth memory market in the region.
  • Additionally, the US government started the Data Center Optimization Initiative (DCOI) to deliver better services to the public while increasing return on investment to taxpayers by consolidating many data centers in the country. The consolidation process includes building hyper-scale data centers and shutting off the underperforming ones. According to Cloudscene, the country had around 5,381 data centers in the United States as of March 2024.
  • Memory manufacturing companies in North America are seeking opportunities for product expansions. For instance, Intel announced the launch of the next generation Sapphire Rapids (SPR) Xeon Scalable processor with high bandwidth memory (HBM). DDR5, supported by Sapphire Rapids, is expected to replace DDR4, the current trend in server memory, with high bandwidth memory (HBM) support, which may significantly expand the memory bandwidth available to the CPU.

High Bandwidth Memory Industry Overview

The high bandwidth memory market is highly fragmented. The market is highly competitive and consists of several major players. This industry's competitive rivalry primarily depends on sustainable competitive advantage through innovation, market penetration, and competitive strategy power. Since the market is capital-intensive, the barriers to exit are also high. Some of the key players in the market are Intel Corporation, Toshiba Corporation, and Fujitsu Ltd.

  • April 2024 - TSMC signed a Memorandum of Understanding with SK Hynix to develop next-generation HBM (high bandwidth memory) and a next-generation packaging technology. SK Hynix intends to utilize TSMC's sophisticated logic processes for the foundational component of HBM4, aiming to incorporate more features within the confined space, which is anticipated to boost both the performance and energy efficiency of its memory chips.
  • March 2024 - Camtek Ltd announced that it received a new order for approximately USD 25 million from a tier-1 HBM manufacturer for the inspection and metrology of high bandwidth memory (HBM). Most of the systems are expected to be delivered in the second half of 2024.

Additional Benefits:

  • The market estimate (ME) sheet in Excel format
  • 3 months of analyst support

TABLE OF CONTENTS

1 INTRODUCTION

  • 1.1 Study Assumptions and Market Definition
  • 1.2 Scope of the Study

2 RESEARCH METHODOLOGY

3 EXECUTIVE SUMMARY

4 MARKET INSIGHTS

  • 4.1 Market Overview
  • 4.2 Industry Value Chain Analysis
  • 4.3 Industry Attractiveness - Porter's Five Forces Analysis
    • 4.3.1 Bargaining Power of Suppliers
    • 4.3.2 Bargaining Power of Buyers/Consumers
    • 4.3.3 Threat of New Entrants
    • 4.3.4 Threat of Substitutes
    • 4.3.5 Intensity of Competitive Rivalry
  • 4.4 Assessment of the Impact of COVID-19 on the Market
  • 4.5 Market Drivers
    • 4.5.1 Growing Need for High Bandwidth, Low Power Consuming, and Highly Scalable Memories
    • 4.5.2 Increasing Adoption of Artificial Intelligence
    • 4.5.3 Rising Trend of Miniaturization of Electronic Devices
  • 4.6 Market Challenges
    • 4.6.1 Exorbitant Costs and Design Complexities Associated with HBM
  • 4.7 DRAM MARKET
    • 4.7.1 DRAM Revenue and Demand Forecast (2023-2028)
    • 4.7.2 DRAM Revenue by Geography (Same Geographical Regions as in the HBM Market)
    • 4.7.3 Current Pricing of DDR5 RAM Products
    • 4.7.4 List of DDR5 Product Manufacturers

5 MARKET SEGMENTATION

  • 5.1 By Application
    • 5.1.1 Servers
    • 5.1.2 Networking
    • 5.1.3 Consumer
    • 5.1.4 Automotive and Other Applications
  • 5.2 By Geography
    • 5.2.1 North America
      • 5.2.1.1 United States
      • 5.2.1.2 Canada
    • 5.2.2 Europe
      • 5.2.2.1 Germany
      • 5.2.2.2 France
      • 5.2.2.3 United Kingdom
      • 5.2.2.4 Rest of Europe
    • 5.2.3 Asia-Pacific
      • 5.2.3.1 India
      • 5.2.3.2 China
      • 5.2.3.3 Japan
      • 5.2.3.4 Rest of Asia-Pacific
    • 5.2.4 Rest of the World

6 COMPETITIVE LANDSCAPE

  • 6.1 Company Profiles
    • 6.1.1 Key HBM Memory Die Suppliers
      • 6.1.1.1 Micron Technology Inc.
      • 6.1.1.2 Samsung Electronics Co. Ltd
      • 6.1.1.3 SK Hynix Inc.
    • 6.1.2 Key Stakeholders Profiles
      • 6.1.2.1 Intel Corporation
      • 6.1.2.2 Fujitsu Limited
      • 6.1.2.3 Advanced Micro Devices Inc.
      • 6.1.2.4 Xilinx Inc.
      • 6.1.2.5 Nvidia Corporation
      • 6.1.2.6 Open Silicon Inc.

7 INVESTMENT ANALYSIS

8 MARKET OPPORTUNITIES AND FUTURE TRENDS